3-D Dual-Gate Photosensitive Thin-Film Transistor Architectures Based on Amorphous Silicon

Kai Wang,Hai Ou,Jun Chen,Arokia Nathan,Shaozhi Deng,Ningsheng Xu
DOI: https://doi.org/10.1109/ted.2017.2760320
IF: 3.1
2017-01-01
IEEE Transactions on Electron Devices
Abstract:In contrast to the conventional planar p-i-n photodiode and a metal-semiconductor-metal photodetector, the 3-D dual-gate photosensitive thin-film transistor (TFT) architectures presented here attain excellent photoresponse characteristics. Operating the device in the subthreshold regime further boosts the photoconductive gain as a result of light-induced decrease in the threshold voltage. This paper presents design considerations along with a performance comparison between 3-D photosensitive TFTs that have p-and FIN-shaped channels and conventional TFT with a planar channel. Our paper shows that the p-shaped structure tends to have a higher sensitivity while the FIN-shaped counterpart is more responsive with wider dynamic range. For both structures, a measured photoconductive gain of 10(4) similar to 10(6)% is obtained with spectral responsivity ranging from near UV to near IR, and the photoresponse time in the range of tens of milliseconds. The 3-D dual-gate photosensitive TFT architecture appears to be very promising for large-area, low-level UV, visible, and IR detection applications.
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