Ultraviolet to Long-Wave Infrared Photodetectors Based on a Three-Dimensional Dirac Semimetal/Organic Thin Film Heterojunction

Ming Yang,Jun Wang,Yunkun Yang,Qi Zhang,Chunhui Ji,Guorong Wu,Yuanjie Su,Jun Gou,Zhiming Wu,Kaijun Yuan,Faxian Xiu,Yadong Jiang
DOI: https://doi.org/10.1021/acs.jpclett.9b01619
2019-01-01
Abstract:In this work, high-performance ultraviolet to long-wave infrared (UV-LIR) devices based on an N-type three-dimensional (3D) Dirac semimetal Cd3As2 and P-type organic (small molecules and polymers) heterojunction are prepared. Primarily, the photodetector shows a broadband photoresponse from 365 to 10600 nm. The optimized device responsivity is 729 mA/W, along with a fast response time of 282 μs and a high on-off ratio of 6268, which are 2 orders of magnitude higher than those previously reported for a 3D Dirac semimetal-based device. In the LIR region (10600 nm), the responsivity and on-off ratio can reach 81.3 mA/W and 100, respectively. In addition, the time-resolved femtosecond pump detection technology is used to reveal the relaxation time of Cd3As2/organic thin films (4.30 ps), indicating that Cd3As2/organic thin films have great potential for the manufacture of fast IR devices. These results demonstrate that the 3D Dirac semimetal/organic thin film heterojunction photodetectors will be a feasible solution for high-speed and broadband photodetectors in large-array imaging.
What problem does this paper attempt to address?