Backside Illuminated 3-D Photosensitive Thin-Film Transistor on a Scintillating Glass Substrate for Indirect-Conversion X-Ray Detection

Yangbing Xu,Yihong Qi,Qi Qian,Jun Chen,Zhongmin Yang,Kai Wang

DOI: https://doi.org/10.1109/led.2020.3001922

IF: 4.8157

2020-08-01

IEEE Electron Device Letters

Abstract:A conventional large-area indirect-conversion X-ray detector usually adopts front side illumination (FSI) of a scintillator atop a photodiode-integrated thin-film transistor (TFT) array. This work however proposes a backside illuminated (BSI) three-dimensional dual-gate photosensitive a-Si:H TFT (3-D DGTFT) on a scintillating glass substrate, aiming for indirect-conversion X-ray detection. It not only improves the sensitivity with a 3-D photosensitive TFT as an active pixel sensor, but also enhances the resolution and photon utilization by reducing photon scattering and optical crosstalk. Backside illumination of 3-D photosensitive TFT-integrated scintillating glass therefore provides an alternative approach to large-area indirect-conversion X-ray imaging.

engineering, electrical & electronic

What problem does this paper attempt to address?

The paper primarily aims to address the issues of high sensitivity and high spatial resolution faced by large X-ray detectors in industrial and medical imaging applications. Traditional large-area indirect conversion X-ray detectors typically use Front Side Illumination (FSI), where the X-ray scintillator is positioned on the photodiode above the Thin-Film Transistor (TFT) array. Although this method is feasible, it has limitations in improving spatial resolution, reducing light scattering, and optical crosstalk.

To solve the above problems, the paper proposes a novel Back Side Illumination (BSI) 3-D Dual-Gate Photosensitive a-Si:H TFT (3-D DGTFT), which is integrated on a scintillating glass substrate for indirect conversion X-ray detection. This design not only enhances sensitivity but also improves resolution and photon utilization by reducing light scattering and optical crosstalk. Specifically:

1. **Back Side Illumination Technology**: Traditional X-ray detectors mostly use front side illumination, while the proposed detector utilizes back side illumination, where X-rays first incident on the scintillating glass substrate and then the 3-D DGTFT integrated on the back of the substrate receives the photons emitted by the scintillating material.

2. **3-D Dual-Gate Photosensitive a-Si:H TFT (3-D DGTFT)**: This new type of transistor, as an Active Pixel Sensor (APS), can significantly improve the sensitivity of the detector.

3. **Enhanced Spatial Resolution**: By shortening the optical path and inserting an anti-scattering metal grid to reduce optical crosstalk between adjacent pixels, spatial resolution is improved.

4. **Improved Photon Utilization**: Compared to traditional front side illumination detectors, this detector can better utilize photons, improving overall efficiency.

In summary, this research aims to develop an indirect conversion X-ray detector with higher sensitivity and better spatial resolution by introducing back side illumination technology and the design of 3-D dual-gate photosensitive thin-film transistors.