Abstract:Since its emergence a decade ago, amorphous silicon flat panel X-ray detector has established itself as a ubiquitous platform for an array of digital radiography modalities. The fundamental building block of a flat panel detector is called a pixel. In all current pixel architectures, sensing, storage, and readout are unanimously kept separate, inevitably compromising resolution by increasing pixel size. To address this issue, we hereby propose a “smart” pixel architecture where the aforementioned three components are combined in a single dual-gate photo thin-film transistor (TFT). In other words, the dual-gate photo TFT itself functions as a sensor, a storage capacitor, and a switch concurrently. Additionally, by harnessing the amplification effect of such a thin-film transistor, we for the first time created a single-transistor active pixel sensor. The proof-of-concept device had a W/L ratio of 250μm/20μm and was fabricated using a simple five-mask photolithography process, where a 130nm transparent ITO was used as the top photo gate, and a 200nm amorphous silicon as the absorbing channel layer. The preliminary results demonstrated that the photocurrent had been increased by four orders of magnitude due to light-induced threshold voltage shift in the sub-threshold region. The device sensitivity could be simply tuned by photo gate bias to specifically target low-level light detection. The dependence of threshold voltage on light illumination indicated that a dynamic range of at least 80dB could be achieved. The smart pixel technology holds tremendous promise for developing high-resolution and low-dose X-ray imaging and may potentially lower the cancer risk imposed by radiation, especially among paediatric patients.

Dual-Gate Photosensitive Fin-Tft With High Photoconductive Gain And Near-Uv To Near-Ir Responsivity

3-D Dual-Gate Photosensitive Thin-Film Transistor Architectures Based on Amorphous Silicon

Three-dimensional Fin-Shaped Dual-Gate Photosenstive A-Si:H Thin-Film Transistor for Low Dose X-ray Imaging

Dual-Gate Photosensitive A-Si:H Thin-Film Transistor with a $\pi $ -Shape Channel for Large-Area Imaging and Sensing

Highly Photosensitive Dual-Gate a-Si:H TFT and Array for Low-Dose Flat-Panel X-Ray Imaging

Dual-Gate Photosensitive A-Si:H TFT Array Enabling Fingerprint-Sensor-Integrated Display Application

Backside Illuminated 3-D Photosensitive Thin-Film Transistor on a Scintillating Glass Substrate for Indirect-Conversion X-Ray Detection

Dual-gate photo thin-film transistor: a “smart” pixel for high- resolution and low-dose X-ray imaging

High-performance IGZO/Ga2O3 dual-active-layer thin film transistor for deep UV detection

Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate

Ultraviolet to Long-Wave Infrared Photodetectors Based on a Three-Dimensional Dirac Semimetal/Organic Thin Film Heterojunction

Dual-color charge-sensitive infrared phototransistors with dynamic optical gate

Solution-Processed P3HT:PbS-Based NIR Photodetector With FET Configuration

High-Performance Ultra-Broadband Photodetector Based on Fe3O4/CrSiTe3 Heterostructures

A TFT-Based Active Pixel Sensor With Dynamic Range > 100dB, Gain > 10 and Broad Spectral Response From Near-UV to Near-IR, Enabling In-Display Sensor Applications

Enhanced Photoresponse in Interfacial Gated Graphene Phototransistor with Ultrathin Al2O3 Dielectric

Vertically Integrated Optical Sensor with Photoconductive Gain > 10 and Fill Factor > 70%

39‐2: Highly Sensitive A‐si:H PIN Photodiode Gated LTPS TFT for Optical In‐Display Fingerprint Identification

Gate‐Tunable Positive and Negative Photoconductance in Near‐Infrared Organic Heterostructures for in‐Sensor Computing

Achieving higher photoabsorption than group III-V semiconductors in ultrafast thin silicon photodetectors with integrated photon-trapping surface structures

Flexible and Air‐Stable Near‐Infrared Sensors Based on Solution‐Processed Inorganic–Organic Hybrid Phototransistors