2D Silicon‐Based Semiconductor Si 2 Te 3 toward Broadband Photodetection

Jiawang Chen,Chaoyang Tan,Gang Li,Lijie Chen,Hanlin Zhang,Shiqi Yin,Ming Li,Liang Li,Guanghai Li

DOI: https://doi.org/10.1002/smll.202006496

IF: 13.3

2021-03-03

Small

Abstract:<p>Silicon‐based semiconductor materials dominate modern technology for more than half a century with extraordinary electrical‐optical performance and mutual processing compatibility. Now, 2D materials have rapidly established themselves as prospective candidates for the next‐generation semiconductor industry because of their novel properties. Considering chemical and processing compatibility, silicon‐based 2D materials possess significant advantages in integrating with silicon. Here, a systematic study is reported on the structural, electrical, and optical performance of silicon telluride (Si₂Te₃) 2D material, a IV−VI silicon‐based semiconductor with a layered structure. The ultrawide photoluminescence (PL) spectra in the range of 550–1050 nm reveals the intrinsic defects in Si₂Te₃. The Si₂Te₃‐based field‐effect transistors (FETs) and photodetectors show a typical p‐type behavior and a remarkable broadband spectral response in the range of 405–1064 nm. Notably, the photoresponsivity and detectivity of the photodetector device with 13.5 nm in thickness and upon 405 nm illumination can reach up to 65 A W⁻¹ and 2.81 × 10¹² Jones, respectively, outperforming many traditional broadband photodetectors. It is believed this work will excite interests in further exploring the practical application of 2D silicon‐based materials in the field of optoelectronics.</p>

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology