Abstract:Abstract Ferroelectric hafnia-based thin films have attracted intense attention due to their compatibility with complementary metal-oxide-semiconductor technology. However, the ferroelectric orthorhombic phase is thermodynamically metastable. Various efforts have been made to stabilize the ferroelectric orthorhombic phase of hafnia-based films such as controlling the growth kinetics and mechanical confinement. Here, we demonstrate a key interface engineering strategy to stabilize and enhance the ferroelectric orthorhombic phase of the Hf 0.5 Zr 0.5 O 2 thin film by deliberately controlling the termination of the bottom La 0.67 Sr 0.33 MnO 3 layer. We find that the Hf 0.5 Zr 0.5 O 2 films on the MnO 2 -terminated La 0.67 Sr 0.33 MnO 3 have more ferroelectric orthorhombic phase than those on the LaSrO-terminated La 0.67 Sr 0.33 MnO 3 , while with no wake-up effect. Even though the Hf 0.5 Zr 0.5 O 2 thickness is as thin as 1.5 nm, the clear ferroelectric orthorhombic (111) orientation is observed on the MnO 2 termination. Our transmission electron microscopy characterization and theoretical modelling reveal that reconstruction at the Hf 0.5 Zr 0.5 O 2 / La 0.67 Sr 0.33 MnO 3 interface and hole doping of the Hf 0.5 Zr 0.5 O 2 layer resulting from the MnO 2 interface termination are responsible for the stabilization of the metastable ferroelectric phase of Hf 0.5 Zr 0.5 O 2 . We anticipate that these results will inspire further studies of interface-engineered hafnia-based systems.

Chemical Solution Deposition of Ferroelectric Sr:HfO2 Film from Inorganic Salt Precursors

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

(001)-oriented Sr:HfO2 ferroelectric films deposited by a flexible chemical solution method

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Improvement of remanent polarization of CeO 2 –HfO 2 solid solution thin films on Si substrates by chemical solution deposition

Ferroelectricity in the Al doped HfO2

Doping Ferroelectric Hafnium Oxide by in-Situ Precursor Mixing

Ferroelectric Hf0.5Zr0.5O2 Thin Films Deposited Epitaxially on (110)-Oriented SrTiO3

Effect of the Hf content on the microstructure and ferroelectric properties of Hf x Zr 1− x O 2 thin films using an all-inorganic aqueous precursor solution

Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress

Transparent, ferroelectric Ca:HfO2 and Sr:HfO2 films grown from chemical solution on ITO-coated glass

Interfacial stress engineering toward enhancement of ferroelectricity in Al doped HfO 2 thin films

Stabilization of Competing Ferroelectric Phases of HfO 2 under Epitaxial Strain

Optimizing Annealing Process for Ferroelectric Y‐Doped HfO 2 Thin Films by All‐Inorganic Aqueous Precursor Solution

Enhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templates

Interface-engineered ferroelectricity of epitaxial Hf0.5Zr0.5O2 thin films

Control of intrinsic ferroelectricity and structural phase in pure HfO2 films via crystalline orientation

Influence of treatment parameters on selectivity of verteporfin therapy.

Ferroelectricity in hafnium oxide thin films

Atomic Layer Deposition of Epitaxial Ferroelectric Hf0.5Zr0.5O2 Thin Films

Orientation control of phase transition and ferroelectricity in Al-doped HfO2 thin films