Abstract:The discovery of ferroelectricity in both pure and doped HfO$_2$-based thin films have revitalized the interest in using ferroelectrics for nanoscale device applications. To take advantage of this silicon-compatible ferroelectric, fundamental questions such as the origin of ferroelectricity and better approach to controlled realization of ferroelectricity at the nanoscale need to be addressed. The emergence of robust polarization in HfO$_2$-based thin films is considered as the cumulative effect of various extrinsic factors such as finite-size effects and surface/interface effects of small grains, compressive stress, dopants, oxygen vacancies, and electric fields. The kinetic effects of phase transitions and their potential impacts on the emergence of ferroelectricity in HfO$_2$ at the nanoscale are not well understood. In this work, we construct the transition paths between different polymorphs of hafnia with density functional theory calculations and variable-cell nudged elastic band technique. We find that the transition barriers depend strongly on the mechanical boundary conditions and the transition from the tetragonal phase to the polar orthorhombic phase is a fast process kinetically under clamping. The effects of growth orientations and epitaxial strains on the relative stability of different phases of HfO$_2$ are investigated. The two orthorhombic phases, polar $Pca2_1$ and non-polar $Pbca$, become thermodynamically stable in (111)-oriented thin films over a wide range of epitaxial strain conditions. This work suggests a potential avenue to better stabilize the ferroelectric phase in HfO$_2$ thin films through substrate orientation engineering.

Interfacial stress engineering toward enhancement of ferroelectricity in Al doped HfO 2 thin films

Ferroelectricity in the Al doped HfO2

Orientation control of phase transition and ferroelectricity in Al-doped HfO2 thin films

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Stabilization of Competing Ferroelectric Phases of HfO 2 under Epitaxial Strain

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Effects of Growth Orientations and Epitaxial Strains on Phase Stability of HfO$_2$ Thin Films

A synergistic interplay between dopant ALD cycles and film thickness on the improvement of the ferroelectricity of uncapped Al:HfO 2 nanofilms

Flexoelectricity-stabilized ferroelectric phase with enhanced reliability in ultrathin La:HfO2 films

Control of intrinsic ferroelectricity and structural phase in pure HfO2 films via crystalline orientation

Evolution of ferroelectricity with annealing temperature and thickness in sputter deposited undoped HfO$_2$ on silicon

Interface-engineered ferroelectricity of epitaxial Hf0.5Zr0.5O2 thin films

Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress

Interface control of tetragonal ferroelectric phase in ultrathin Si-doped HfO2 epitaxial films

Engineering ferroelectricity in monoclinic hafnia

Distinguishing the Rhombohedral Phase from Orthorhombic Phases in Epitaxial Doped HfO2 Ferroelectric Films

Disentangling stress and strain effects in ferroelectric HfO2

Enhancement of the Ferroelectricity by Interface Engineering Observed by in Situ Transmission Electron Microscope

Progress in Computational Understanding of Ferroelectric Mechanisms in HfO$_2$

Structural and Ferroelectric Transition in Few-Layer HfO2 Films by First Principles Calculations

Creating Ferroelectricity in Monoclinic ( HfO2 )1 / ( CeO2 )1 Superlattices