Abstract:GaN-based high-power laser diodes (LDs) have attracted tremendous interests in next-generation lighting applications, such as laser display, car laser light. However, high injection current usually brings inevitable drawbacks, including the well-known efficiency droop, Auger recombination and self-heating which obstruct further improvements of GaN-based optoelectrical devices. In this paper, influence of hole overflow at high injection current in an asymmetric GaN-based high-power blue LD has been comprehensively investigated and successfully suppressed by employing a new sandwiched GaN/AlGaN/GaN lower quantum barrier (GAG-LQB). Systematical simulations and measurements of structural and optical properties are carried out. As a result, the V-shaped defects induced by thick n-InGaN waveguide layer are apparently eliminated, which provides a more growth-friendly platform for deposition of the rest epitaxial layers and thus a better crystalline quality is obtained. On the other hand, the modified LD exhibits better photo-electrical properties with slope efficiency (SE) increasing from 0.98 to 1.24 and wall-plug efficiency (WPE) increasing from 18.7% to 20.5% at a high current of 1.5 A and no obvious efficiency droop is observed at a current as high as 2 A compared with the conventional one, because the middle-inserted AlGaN layer could form an extra barrier on the valence band to weaken the hole overflow and enhance the radiative recombination. Furthermore, the in-plane compressive strain induced by InGaN quantum wells (QWs) is also partially compensated by the tensile strain induced by the AlGaN layer. Therefore, the piezoelectric field-induced polarization is effectively alleviated and the wavelength blueshift is reduced from 7 nm to 1.6 nm.

Suppression of Recombination in Waveguide in C-Plane InGaN-based Green Laser Diodes

Green Laser Diodes with Low Threshold Current Density Via Interface Engineering of InGaN/GaN Quantum Well Active Region.

Enhanced carrier confinement and radiative recombination in GaN-based lasers by tailoring first-barrier doping.

Green Laser Diodes with Constant Temperature Growth of InGaN/GaN Multiple Quantum Well Active Region

Improving optical and electrical properties of InGaN-based green laser diodes by graded-compositional waveguide structure

Investigation on the mechanism of carrier recombination in the GaN-based blue laser diode before lasing

Enhancing Performance of GaN-based LDs by Using GaN/InGaN Asymmetric Lower Waveguide Layers

Design Considerations for GaN-Based Blue Laser Diodes with InGaN Upper Waveguide Layer

Confinement Factor and Absorption Loss of AlInGaN Based Laser Diodes Emitting from Ultraviolet to Green

Suppression of Substrate Mode in GaN-based Green Laser Diodes

Suppression Of Thermal Degradation Of Ingan/Gan Quantum Wells In Green Laser Diode Structures During The Epitaxial Growth

Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes.

Effect of Asymmetric InAlGaN/GaN Superlattice Barrier Structure on the Optoelectronic Performance of GaN-Based Green Laser Diode

Performance Enhancement of GaN-Based Laser Diodes with Prestrained Growth

The Critical Impact of the Waveguide Thickness on the Optical and Threshold Behaviors of InGaN-based Green Laser Diodes

Hole Transport in C-Plane Ingan-Based Green Laser Diodes

Effect of Inhomogeneous Broadening on Threshold Current of GaN-based Green Laser Diodes

Optical Characterization of InGaN/GaN Quantum Well Active Region of Green Laser Diodes

Characterization of GaInN/GaN layers for green emitting laser diodes

High-power Hybrid GaN-based Green Laser Diodes with ITO Cladding Layer

Influence Of Sandwiched Gan/Algan/Gan Lower Quantum Barrier On Crystallinity And Luminescence Of An Asymmetric Gan-Based High-Power Laser Diode