Abstract:In this paper, design, fabrication and experimental analysis of a novel 4H-SiC pinched barrier rectifier (PBR) are presented. The operation mechanism of the pinched barrier is analyzed by numerical simulation and energy band diagrams. PN junction depth (X j ) and spacing (S) parameters in the diode structure are carefully designed to achieve a prototype optimal structure, and both forward and reverse characteristics are compared with those of JBS diodes by experimental results. It is demonstrated that, only by simply adjusting the PN junction depth and spacing parameters, the pinched barrier diode can obtain relatively optimal performance close to that of JBS diodes. The addition of channel doping concentration (N ch ) consideration for the structure design can achieve further improvements and superior performances than JBS diodes. In comparison with the optimum JBS diode design (S=1.2pm), for an on-set voltage control of 0.8V, PBR diode with optimum design sets of S and N ch can achieve a wider trade-off window (S≤0.8pm) between the device forward and reverse performances. Furthermore, PBR diode can achieve superior performance with lower forward voltage drop (1.3V) than JBS diode (1.6V) for the same reverse blocking capability (~1600V). The performance limit of PBR diode is also explored in this paper. For a minimum limit on-set voltage control of 0.6 V, a lowest voltage drop of 1.1V as well as a wide design window can be achieved.

A novel 4H-SiC pinched barrier rectifier

Silicon Carbide Pinched Barrier Rectifier (PBR)

Design and Experimental Study of 4H-Sic Trenched Junction Barrier Schottky Diodes

Experimental Study and Characterization of an Ultrahigh-Voltage Ni/4H–SiC Junction Barrier Schottky Rectifier with Near Ideal Performances

Design and Experimental Study of 1.2kV 4H-SiC Merged PiN Schottky Diode

1.2-kV Low-Barrier 4H-SiC JBS Diodes by Virtue of P-Implants Across Dead Field of Current Flow

1.2-Kv 4H-Sic Merged PiN Schottky Diode with Improved Surge Current Capability

A Novel High Power 4H-Sic Unipolar Diode with Advanced Performance

An SiC MOSFET & Si Diode Hybrid Three-Phase High-Power Three-level Rectifier

Single Pulse Avalanche Robustness and Analysis for 1200-V SiC Junction Barrier Schottky Diode

1.43 Kv 4H-Sic Lateral Junction Barrier Schottky Diode with High BFOM (390 MW/cm2)

Experimental and numerical analyses of high voltage 4H-SiC junction barrier Schottky rectifiers with linearly graded field limiting ring

1.4 3 Kv 4H-Sic Lateral Junction Barrier Schottky Diode with High BFOM (390 MW/cm2)

4 700V SiC PiN Rectifier

Theoretical and Experimental Study of 13.4 kV/55 A SiC PiN Diodes with an Improved Trade-Off between Blocking Voltage and Differential On-Resistance

Analysis And Simulation Of A 4h-Sic Semi-Superjunction Schottky Barrier Diode For Softer Reverse-Recovery

Multiple P-Type SiC Micro-Island As Junction Termination Extension for 4H-Sic Schottky Barrier Diode

High-Performance 4H-Sic Junction Barrier Schottky Diodes with Double Resistive Termination Extensions

Novel Design and Modelling of SiC Junction Barrier Schottky Diode with Improved Baliga FOM under High-temperature Applications

Design and Fabrication of 1.2 kV/10A 4H-SiC Junction Barrier Schottky Diodes with High Current Density

Simulation of 4H-SiC Trench Junction Barrier Schottky Diodes with High-k Dielectrics