Abstract:The optical properties of GaN-based green light-emitting diodes (LED) are investigated by transmission electron microscopy (TEM) and temperature-dependent micro-photoluminescence (μ-TDPL) in this study. Compared with the emission of normal c-plane multiple quantum wells (C-MQWs), the emission of C-MQWs close to V-shaped pits (V-pits) exhibits a shoulder peak phenomenon at cryogenic temperature, and the shoulder peak gradually disappears as the temperature increases. At room temperature, the peak of C-MQWs close to V-pits (C2) exhibits a red-shift. The formation of V-pits would induce strain relaxation. Strain relaxation can result in Indium (In) incorporation and localization, and reduced quantum-confined stark effects (QCSE). In incorporation and localization can lead to the red-shift of C2, reduced QCSE can cause the blue-shift of C2. Therefore, the red-shift of C2 arises from further In incorporation and localization of C-MQWs. It is worth noting that In incorporation and localization is dominant in the formation of V-pits for green InGaN/GaN C-MQWs. Additionally, the carriers limited in sidewall MQWs (S-MQWs) of V-pits escape into C-MQWs close to V-pits can mitigate the common phenomenon in which the emission intensity of C-MQWs decreases as the temperature increases, which helps improve the emission intensity of GaN-based green LEDs.

Investigation of the properties and formation process of a peculiar V-pit in HVPE-grown GaN film

Investigation of Pits in Ge-doped GaN Grown by HVPE

Evolution of V-pits in the Ammonothermal Growth of GaN on HVPE-GaN Seeds

Nature of V-Shaped Defects in GaN

Etch Pits and Threading Dislocations in GaN Films Grown by Metal-Organic Chemical Vapour Deposition

Optical and Electrical Characterizations of the V-shaped Pits in Fe-doped Bulk GaN

Study of the Defects in GaN Epitaxial Films Grown on Sapphire by HVPE

Etch-Pits, of Gan Films with Different Etching Methods

MOCVD growth of thick V-pit-free InGaN films on semi-relaxed InGaN substrates

Etch‐pits and Threading Dislocations in Thick LEO GaN Films on Sapphire Grown by MOCVD

Microstructure and Origin of Dislocation Etch Pits in Gan Epilayers Grown by Metal Organic Chemical Vapor Deposition

Microscopy studies of InGaN MQWs overgrown on porosified InGaN superlattice pseudo-substrates

The Growth of High-Quality and Self-Separation GaN Thick-Films by Hydride Vapor Phase Epitaxy

Effect of V-Shaped pits on optical properties of GaN-Based green light-emitting diodes

"WM"-Shaped Growth of GaN on Patterned Sapphire Substrates

Growth of Freestanding GaN Crystals on Three-Dimensional Mesh Porous Substrate by HVPE

A Study of Gan Regrowth on the Micro-Faceted Gan Template Formed by in Situ Hcl Etching

Transmission Electron Microscopy Study of the Microstructure of a GaN Film Grown on Sapphire by Organometallic Vapor Phase Expitaxy

Metal–Organic Vapor‐Phase Epitaxy of Semipolar InGaN Quantum Dots Based on GaN V‐Shaped Pits

Investigation of Dislocations and Defects in Epitaxial Lateral Overgrown GaN by Photoelectrochemical Wet Etching

Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor phase epitaxy