Abstract:Developing cost-effective methods to synthesize large-size GaN films remains a challenge owing to the high dislocation density during heteroepitaxy. Herein, AlGaN/GaN HEMTs were grown on 6- and 8-inch Si(111) substrates using metal–organic chemical vapor deposition, and their basic properties and dislocation evolution characteristics were investigated thoroughly. With the insertion of a 100 nm thin AlGaN buffer layer, bow–warp analysis of the epitaxial wafers revealed excellent stress control for both the 6- and 8-inch wafers. HR-XRD and AFM analyses validated the high crystal quality and step-flow growth mode of GaN. Further, Hall measurements demonstrated the superior transport performance of AlGaN/GaN heterostructures. It is worth noting that dislocations tended to annihilate in the AlN nucleation layer, the thin AlGaN buffer layer, and the GaN buffer layer in the initial thickness range of 200–300 nm, which was indicated by ADF-STEM. To be specific, the heterointerfaces exhibited a significant effect on the annihilation of c-type (b = ) dislocations, which led to the formation of dislocation loops. The thin inserted layers within the AlGaN buffer layer played a key role in promoting the annihilation of c-type dislocations, while they exerted less influence on a-type (b = 1/3 ) and (a+c)-type (b = 1/3 ) dislocations. Within an initial thickness of 200–300 nm in the GaN buffer layer, a-type and (a+c)-type dislocations underwent strong interactions, leading to considerable dislocation annihilation. In addition, the EELS results suggested that the V-shaped pits in the AlN nucleation layer were filled with the AlGaN thin layer with a low Al content.

Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor phase epitaxy

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Suppression of dislocation-induced spiral hillocks in MOVPE-grown AlGaN on face-to-face annealed sputter-deposited AlN template

Anisotropic Defect Reduction in Non-Polar A-Plane Gan Grown by Hydride Vapor Phase Epitaxy on Maskless Patterned Templates

Microstructures of GaN Films Laterally Overgrown on Si(111) by Hydride Vapour Phase Epitaxy

High-resolution X-ray Diffraction Analysis on HVPE-grown Thick GaN Layers

Orientation-dependent Strain and Dislocation in HVPE-grown Α -Ga2o3 Epilayers on Sapphire Substrates

Study on the Dislocation of Epitaxial m-GaN Films Revealed by High Resolution X-Ray Diffration

MOCVD growth of N-polar GaN on on-axis sapphire substrate: impact of AlN nucleation layer on GaN surface hillock density

Investigation of the Dislocation Behavior of 6- and 8-Inch AlGaN/GaN HEMT Structures with a Thin AlGaN Buffer Layer Grown on Si Substrates

Modulation of Anisotropic Crystalline in A-Plane GaN on HT-AlN Buffer Layer

Stress Study of GaN Grown on Serpentine-Channels Masked Si(111) Substrate by MOCVD

Microstructures of GaN Buffer Layers Grown on Si(111) Using Rapic Thermal Process Low-Pressure Metalorganic Chemical Vapor Deposition

Dislocation Slip Behaviors in High-Quality Bulk GaN Investigated by Nanoindentation

Structural Properties of Laterally Overgrown Gan

Etch Pits and Threading Dislocations in GaN Films Grown by Metal-Organic Chemical Vapour Deposition

Study of (112̄0) non polar a-plane GaN on the (11-02) r-plane sapphire

Investigation of GaN with Low Threading Dislocation Density Grown on Graphene/Sputtered AlN Composite Substrate

Hillock Growth in Cuzr Metallic Glass