Abstract:<p>The 1-period, 2-period, 4-period and 6-period InGaN/GaN quantum wells were grown by metal organic chemical vapor deposition system. Atomic force microscopy measurements and Scanning transmission electron microscopy (STEM) high-angle annular dark field (HAADF) images were used to characterize the surface morphology and cross section structures. High-resolution Transmission Electron Microscope (HRTEM) images were shot to observe defects and non-radiative recombination centers. With increasing period number, the strain accumulated and relaxed gradually, leading to the formation of high density V-shaped pits (VPs). When the number of period increased to 4, the density of VPs was high enough to connect site by site, so that island-shaped morphology appeared between adjacent VPs. All islands can be divided into three categories according to size: large, medium and small islands. Under those large islands, the InGaN layers were cut off by the VPs generated at the bottom quantum well (QW), which also cut off the migration path of indium atoms and formed the vertically arranged indium-rich (In-rich) quantum dots (QDs). Under the medium and small islands, the InGaN layer was still continuous, but significant fluctuations of composition and thickness appeared due to strain relaxation, leading to the formation of In-rich QDs. The In-rich QDs formed in the two ways can enhance the carrier localization effect, which is conducive to the improvement of internal quantum efficiency. However, the strain also accumulated with increasing the number of periods, leading to a greater degree of strain relaxation and the formation of non-radiative recombination centers (stacking faults) in In-rich QDs, which reduced the internal quantum efficiency. By controlling strain reasonably, the internal quantum efficiency is expected to be further improved.</p>

Microscopy studies of InGaN MQWs overgrown on porosified InGaN superlattice pseudo-substrates

Photoluminescence of InGaN/AlGaN Strained Multiple Quantum Wells Influenced by Dry Etching

Plasma etching of III-V semiconductors and mechanism of crystalline damage

Investigation of ICP Etching Damage of InAsP/InP Strained Multiple Quantum Wells

Different Strain Relief Behaviors in Al0.35ga0.65n/Gan Multiple Quantum Wells on Gan/Sapphire Templates with Aln/Gan Supperlattices and Low-Temperature Aln Interlayers

InAs0.45P0.55/InP Strained Multiple Quantum Wells Intermixed by Inductively Coupled Plasma Etching

The formation of island-shaped morphology on the surface of InGaN/GaN QWs and the enhancement of carrier localization effect caused by high-density V-shaped pits

Probing local emission properties in InGaN/GaN quantum wells by scanning tunneling luminescence microscopy

X-ray reciprocal space mappings of high Indium content InGaN multi-quantum-wells modified by V-shape interfaces

Investigation of the influence of InGaN underlying layers on the optical properties of InGaN quantum well structures

Effect of V-Shaped pits on optical properties of GaN-Based green light-emitting diodes

Effect of Indium in Al0.65Ga0.35N/Al0.8Ga0.2N MQWs for the Development of Deep‐uv Laser Structures in the Form of Graded‐index Separate Confinement Heterostructure (GRINSCH)

Structural analysis of InxGa1-xN/GaN MQWs by different experimental methods

Photoluminescence of Green InGaN/GaN MQWs Grown on Pre-Wells*

The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers

Hole Injection from the Sidewall of V-Shaped Pits into C-Plane Multiple Quantum Wells in Ingan Light Emitting Diodes

Structural characterization of InGaN multi-quantum-wells grown on high indium content InGaN template with {1 0 1¯m} faceted surface

Investigation on Epitaxial Lateral Overgrowth of InGaN/GaN Multi-Quantum-Well Nanowires

Strain Effect on Photoluminescences from InGaN MQWs with Different Barriers Grown by MOCVD

Effect Of Critical Thickness On Structural And Optical Properties Of Inxga1-Xn/Gan Multiple Quantum Wells

Study of Band Structure InxGa1−xN∕GaN Multiple Quantum Wells by High-Resolution Electron Microscopy and Electron Holography