Abstract:Metal-assisted chemical etching is a relatively new top-down approach allowing a highly controlled and precise fabrication of Si and Si/Ge superlattice nanowires. It is a simple method with the ability to tailor diverse nanowire parameters like diameter, length, density, orientation, doping level, doping type, and morphology. In a typical metal-assisted chemical etching procedure, a Si substrate is covered by a lithographic noble metal film and etched in a solution containing HF and an oxidant (typically H2O2). In general, the function of the metal is to catalyze the reduction of H2O2, which delivers electronic holes necessary for the oxidation and subsequent dissolution of the Si oxide by HF. However, the details of the etching process using contiguous metal thin films, especially the mass transport of reactants and byproducts are still not well understood. In this study, the etching mechanism was systematically investigated. Several models of metal-assisted chemical etching using a contiguous metal film as a catalyst were developed and tested by performing different well-controlled etching experiments. The experiments helped to identify two processes fundamental for the formation of Si nanowires. First, a thin porous layer is formed beneath the metal film during etching, which facilitates the transport of the electrolyte (HF and H2O2). Second, the porous layer is continuously etched away in an electropolishing process, which occurs in direct contact with the metal film. Our results lead to an improved understanding of the fundamentals of the metal-assisted chemical etching on a microscopic scale. It potentially paves a way to integrate lithography with metal-assisted chemical etching for fabrication of Si nanowires with adjustable surface patterns.

The path of mass transfer during Au thin film-assisted chemical etching by designed surface barriers

transfer during Au thin fi lm-assisted chemical etching by designed surface barriers

Running droplet of interfacial chemical reaction flow

Model for the mass transport during metal-assisted chemical etching with contiguous metal films as catalysts

Study on the Impact of Fe3O4@Au Magnetic Nanoparticles in Metal-Assisted Chemical Etching

Metal-assisted Electrochemical Etching of Silicon

Optimization of Metal-Assisted Etchant Components for Fabrication of Porous Silicon

Study of the Electromigration Behaviour of Au–Ag Thin Films Deposited on SiO 2 Substrate Using AES, XPS and AFM Techniques

Metal-Assisted Chemical Etching Using Tollen’s Reagent to Deposit Silver Nanoparticle Catalysts for Fabrication of Quasi-ordered Silicon Micro/Nanostructures

Metal-assisted homogeneous etching of single crystal silicon: A novel approach to obtain an ultra-thin silicon wafer

Gold-thickness-dependent Schottky Barrier Height for Charge Transfer in Metal-Assisted Chemical Etching of Silicon

Oxidation Rate Effect on the Direction of Metal-Assisted Chemical and Electrochemical Etching of Silicon

Study of the Relationship Between Metal-Assisted Chemical Etching and Direction of the Applied Electric Field

Etching Mechanisms of CF3Etching Fluorinated Si: Molecular Dynamics Simulation

Inspired Superhydrophobic Surfaces by A Double-Metal-Assisted Chemical Etching Route

Research on Silicon Wafer Surface Phase under the Ultra-thin Slicing Process and Its Etching Hindrance Behavior during Metal-Assisted Chemical Etching

Surface Structure Dependence of Mechanochemical Etching: Scanning Probe-Based Nanolithography Study on Si(100), Si(110), and Si(111)

Electric field induced interfacial reaction of Au-Ag bimetal film on SiO2 surface

Etching Anisotropy Mechanisms Lead to Morphology-Controlled Silicon Nanoporous Structures by Metal Assisted Chemical Etching

Influence of the Mobility of Pt Nanoparticles on the Anisotropic Etching Properties of Silicon

Metal-assisted chemical etching of silicon: a review.