Abstract:Emerging macro- and flexible electronic applications such as foldable displays, artificial skins, and smart textiles grow rapidly into the market. Solution-processed thin-film transistors (TFTs) based on single-walled carbon nanotubes (SWCNTs) as the semiconductor channel can offer high performance, low cost and versatility for macro- and flexible electronics. Major challenges to the development of SWCNT-based TFTs include: (i) hysteresis in their transfer characteristics (TCs), (ii) difficulties in simultaneous achievements of high on-state current Ion and large on/off current ratio Ion/Ioff, and (iii) poor uniformity and scalability resulting from the poor solution processability. This thesis aims at developing reliable and simple process techniques for fabrication of the SWCNT-based TFTs that possess the afore-stated characteristics. It presents a systematic investigation to not only explore the fundamental device physics, but also develop novel fabrication methods for enhancement of device performance.First, issues related to the measurement of gate capacitance (Cg), the determination of current scalability, and the hysteresis in randomly networked SWCNTs are properly addressed. This leads to the establishment of a comprehensive methodology for extraction of carrier mobility (μ) for the SWCNT-based TFTs. In detail, the large hysteresis is effectively suppressed by adopting a pulsed drain current-gate voltage (Id-Vg) method in which the polarity of the gate pulse was alternating during the measurement. Different from most reported methods in the literature, Cg is accurately determined in our case by performing direct capacitance-voltage measurement on the TFTs.Second, with the employment of functional composites comprising SWCNTs embedded in a semiconducting polymer, poly-9,9 dioctyl-fluorene-cobithiophene (F8T2), as the semiconducting channel via facile solution processes under ambient conditions, the fabricated TFTs exhibit outstanding electrical performance with: (i) negligible hysteresis, (ii) high μ, (iii) high Ion and large Ion/Ioff, (iv) excellent uniformity and dimensional scalability, and (v) good stability. These highly desired performance parameters are achieved owing to an ideal composite structure with metallic SWCNTs being selectively removed and the remaining semiconducting SWCNTs being well wrapped by the polymer matrix.Finally, the developed TFTs basing on the SWCNT/F8T2 composite are used as the building block to construct some logic circuits. The resultant inverters, NANDs, and NORs are found to retain the small-hysteresis characteristics, with a cut-off frequency reaching 100 kHz. The results presented in this thesis advance the state-of-art SWCNT-based macroelectronics.

Inverse Hysteresis and Ultrasmall Hysteresis Thin‐Film Transistors Fabricated Using Sputtered Dielectrics

Hysteresis Suppression of Carbon Nanotube Thin-Film Transistor Using Laminated HfO2/Al2O3 by ALD

SMALL-hysteresis thin-film transistors achieved by facile dip-coating of nanotube/polymer composite.

Eliminating Ferroelectric Hysteresis in All-Two-Dimensional Gate-Stack Negative-Capacitance Transistors

Hysteresis-free Thin-Film Transistors Achieved by Novel Solution-Processing of Nanotubes/polymer Composites

Controllable Hysteresis and Threshold Voltage of Single-Walled Carbon Nano-tube Transistors with Ferroelectric Polymer Top-Gate Insulators

In‐plane ferroelectrics enabling reduced hysteresis in monolayer MoS2 transistors

Stable Hysteresis-Free MoS 2 Transistors with Low-k/High-k Bilayer Gate Dielectrics

Lowering Interface State Density in Carbon Nanotube Thin Film Transistors Through Using Stacked Y2O3/HfO2 Gate Dielectric

Thin-Film Field-Effect Transistors Based on Composites of Semiconducting Polymer and Carbon Nanotubes

Hysteresis of Electronic Transport in Graphene Transistors

Synergistic Engineering of Top Gate Stack for Low Hysteresis 2D MoS2 Transistors

Mechanism and Origin of Hysteresis in Oxide Thin-Film Transistor and Its Application on 3-D Nonvolatile Memory

Hysteresis-free carbon nanotube field effect transistors without any post-treatment.

A nanogapped hysteresis-free field-effect transistor

Controlling of Hysteresis by Varying ZnO-Nanoparticles Amount in P3HT:ZnO Hybrid Thin-Film Transistor: Modeling

Performance Enhancement Of Carbon Nanotube Thin Film Transistor By Yttrium Oxide Capping

The Relaxation of Oxygen Vacancies Induced Hysteresis Behavior of Ferroelectric Negative Capacitance Field-Effect Transistors

Ferroelectric Polarization Effect on Hysteresis Behaviors of Single-Walled Carbon Nanotube Network Field-Effect Transistors with Lead Zirconate-Titanate Gating

Ambipolarity Suppression of Carbon Nanotube Thin Film Transistors

The current hysteresis effect of tower-like MoS2 nanocrystalline film for field emission and memristor applications