Hysteresis-free Thin-Film Transistors Achieved by Novel Solution-Processing of Nanotubes/polymer Composites

Zhiying Liu,Hui Li,Zhijun Qiu,Lirong Zheng,Shi-Li Zhang,Zhibin Zhang

2012-01-01

Abstract:Thin-film transistors (TFTs) based on single-walled carbon nanotubes (SWCNTs) have gained enormous attention in the community of flexible/stretchable electronics. At present, such TFTs often suffer ...

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Ultrathin High-Mobility SWCNT Transistors with Electrodes Printed by Nanoporous Stamp Flexography

Dhanushkodi D. Mariappan,Sanha Kim,Junjie Zhao,Hangbo Zhao,Ulrich Muecke,Karen Gleason,Akintunde Ibitayo Akinwande,A. John Hart

DOI: https://doi.org/10.1021/acsanm.2c03247

IF: 6.14

2023-01-01

ACS Applied Nano Materials

Abstract:To achieve high-performance printed electronic devices, scalable and cost-effective printing of high-quality metallic electrodes with narrow gaps, such as for transistors with short channel lengths, is desirable. Here, we demonstrate short channel (<10 mu m) transistors, using thin (<100-200 nm) electrodes fabricated by flexographic printing with nanoporous stamps, with single-wall carbon nanotubes (SWCNTs) as the network semiconductor. The nanoporous stamps comprise polymer-coated vertically aligned carbon nanotubes and facilitate control of the printed ink thickness in the 50-200 nm range. The measured on-off ratio and mobility meet or exceed those of previously reported SWCNT network transistors fabricated by alternative printing methods.
SMALL-hysteresis thin-film transistors achieved by facile dip-coating of nanotube/polymer composite.

Zhiying Liu,Hui Li,Zhijun Qiu,Shi-Li Zhang,Zhi-Bin Zhang

DOI: https://doi.org/10.1002/adma.201200906

IF: 29.4

2012-01-01

Advanced Materials

Abstract:Small-hysteresis, high-performance thin-film transistors (TFTs) are readily realized simply by dip-coating of a solution-processable composite. The composite consists of single-walled carbon nanotubes (SWCNTs) embedded in semiconducting polymer used as the channel material. The resultant TFTs simultaneously exhibit large on/off current ratio, high on-current level, high mobility in the range 10-20 cm(2)V(-1)s(-1), and good uniformity and scalability.
Thin-Film Field-Effect Transistors Based on Composites of Semiconducting Polymer and Carbon Nanotubes

Zhiying Liu,Zhi-Bin Zhang,Minni Qu,Jiantong Li,Ana López Cabezas,Li-Rong Zheng,Shi-Li Zhang

DOI: https://doi.org/10.1149/ma2010-01/33/1575

2010-01-01

ECS Meeting Abstracts

Abstract:Emerging macro- and flexible electronic applications such as foldable displays, artificial skins, and smart textiles grow rapidly into the market. Solution-processed thin-film transistors (TFTs) based on single-walled carbon nanotubes (SWCNTs) as the semiconductor channel can offer high performance, low cost and versatility for macro- and flexible electronics. Major challenges to the development of SWCNT-based TFTs include: (i) hysteresis in their transfer characteristics (TCs), (ii) difficulties in simultaneous achievements of high on-state current Ion and large on/off current ratio Ion/Ioff, and (iii) poor uniformity and scalability resulting from the poor solution processability. This thesis aims at developing reliable and simple process techniques for fabrication of the SWCNT-based TFTs that possess the afore-stated characteristics. It presents a systematic investigation to not only explore the fundamental device physics, but also develop novel fabrication methods for enhancement of device performance.First, issues related to the measurement of gate capacitance (Cg), the determination of current scalability, and the hysteresis in randomly networked SWCNTs are properly addressed. This leads to the establishment of a comprehensive methodology for extraction of carrier mobility (μ) for the SWCNT-based TFTs. In detail, the large hysteresis is effectively suppressed by adopting a pulsed drain current-gate voltage (Id-Vg) method in which the polarity of the gate pulse was alternating during the measurement. Different from most reported methods in the literature, Cg is accurately determined in our case by performing direct capacitance-voltage measurement on the TFTs.Second, with the employment of functional composites comprising SWCNTs embedded in a semiconducting polymer, poly-9,9 dioctyl-fluorene-cobithiophene (F8T2), as the semiconducting channel via facile solution processes under ambient conditions, the fabricated TFTs exhibit outstanding electrical performance with: (i) negligible hysteresis, (ii) high μ, (iii) high Ion and large Ion/Ioff, (iv) excellent uniformity and dimensional scalability, and (v) good stability. These highly desired performance parameters are achieved owing to an ideal composite structure with metallic SWCNTs being selectively removed and the remaining semiconducting SWCNTs being well wrapped by the polymer matrix.Finally, the developed TFTs basing on the SWCNT/F8T2 composite are used as the building block to construct some logic circuits. The resultant inverters, NANDs, and NORs are found to retain the small-hysteresis characteristics, with a cut-off frequency reaching 100 kHz. The results presented in this thesis advance the state-of-art SWCNT-based macroelectronics.
Solution-Processable Nanotube/Polymer Composite for High-Performance Tfts

Zhiying Liu,Zhi-Bin Zhang,Qiang Chen,Li-Rong Zheng,Shi-Li Zhang

DOI: https://doi.org/10.1109/led.2011.2158569

IF: 4.8157

2011-01-01

IEEE Electron Device Letters

Abstract:Thin-film field-effect transistors (TFTs) are readily fabricated using a semiconductor composite that is solution processed under ambient conditions for the conduction channel. The composite comprises single-walled carbon nanotubes (SWCNTs) embedded in poly-9,9' dioctyl-fluorene-co-bithiophene. Carrier mobility values approaching 10 cm(2)V(-1)s(-1) are obtained for the composite with relatively high SWCNT concentrations. When the SWCNT concentration is reduced for a large ON/OFF current ratio > 10(6), the mobility remains decent around 0.3 cm(2)V(-1)s(-1). The resultant TFTs display remarkable environmental and operational reliability. Nanotube-based composites are therefore of significance in printed electronics owing to their simplicity in device fabrication and competitiveness in device performance.
Thin‐Film Transistors: Polyvinyl Alcohol/SiO2 Hybrid Dielectric for Transparent Flexible/Stretchable All‐Carbon‐Nanotube Thin‐Film‐Transistor Integration (adv. Electron. Mater. 5/2020)

Ziwei Zhang,Chunhui Du,Haoxuan Jiao,Min Zhang

DOI: https://doi.org/10.1002/aelm.202070023

IF: 6.2

2020-01-01

Advanced Electronic Materials

Abstract:By adopting polyvinyl alcohol/SiO2 hybrid layer as dielectric and carbon nanotubes as channel and source/drain/gate, high-performance flexible and stretchable thin-film transistors are realized by Min Zhang and co-workers in article number 1901133 using only traditional photolithography-etching and low-temperature solution processing. The fabricated devices could push many soft application scenarios a step forward.
Solution-Processable High-Purity Semiconducting SWCNTs for Large-Area Fabrication of High-Performance Thin-Film Transistors.

Jianting Gu,Jie Han,Dan Liu,Xiaoqin Yu,Lixing Kang,Song Qiu,Hehua Jin,Hongbo Li,Qingwen Li,Jin Zhang

DOI: https://doi.org/10.1002/smll.201600398

IF: 13.3

2016-01-01

Small

Abstract:For the large-area fabrication of thin-film transistors (TFTs), a new conjugated polymer poly[9-(1-octylonoyl)-9H-carbazole-2,7-diyl] is developed to harvest ultrahigh-purity semiconducting single-walled carbon nanotubes. Combined with spectral and nanodevice characterization, the purity is estimated up to 99.9%. High density and uniform network formed by dip-coating process is liable to fabricate high-performance TFTs on a wafer-scale and the as-fabricated TFTs exhibit a high degree of uniformity.
Synthesis of ZnO Nanowires for Thin Film Network Transistors

S. H. Dalal,H. E. Unalan,Y. Zhang,Pritesh Hiralal,L. Gangloff,Andrew J. Flewitt,Gehan A. J. Amaratunga,William I. Milne

DOI: https://doi.org/10.1117/12.799598

2008-01-01

Abstract:Zinc oxide nanowire networks are attractive as alternatives to organic and amorphous semiconductors due to their wide bandgap, flexibility and transparency. We demonstrate the fabrication of thin film transistors (TFT)s which utilize ZnO nanowires as the semiconducting channel. These thin film transistors can be transparent and flexible and processed at low temperatures on to a variety of substrates. The nanowire networks are created using a simple contact transfer method that is easily scalable. Apparent nanowire network mobility values can be as high as 3.8 cm(2)/VS (effective thin film mobility: 0.03 cm(2)/VS) in devices with 20 mu m channel lengths and ON/OFF ratios of up to 10(4).
Hysteresis-free carbon nanotube field effect transistors without any post-treatment.

Chuan Wang,Yunyi Fu,Ao Guo,Jia Liu,Lunhui Guan,Zujin Shi,Zhennan Gu,Ru Huang,Xing Zhang

DOI: https://doi.org/10.1166/jnn.2009.C073

2009-01-01

Journal of Nanoscience and Nanotechnology

Abstract:Out of hundreds of as-fabricated back-gated carbon nanotube field effect transistors we made, five devices which exhibit indiscernible hysteresis are found. The cause of these hysteresis-free devices is investigated based on the energy band and interface trap theory, and it is attributed to the bundling effect of single-walled carbon nanotubes which will result in a reduced bandgap in the single-walled carbon nanotube bundle compared with an isolated semiconducting carbon nanotube. A specific requirement of the SWNT bundle to satisfy the presumed explanation is also proposed.
Hysteresis Suppression of Carbon Nanotube Thin-Film Transistor Using Laminated HfO2/Al2O3 by ALD

Haozhi Ni,Min Li,Xiaohai Li,Xiwen Zhu,Hanhao Liu,Miao Xu,Lei Wang,Song Qiu,Junbiao Peng

DOI: https://doi.org/10.1109/ted.2022.3141036

IF: 3.1

2022-03-01

IEEE Transactions on Electron Devices

Abstract:Laminated hafnium oxide (HfO2)/alumina (Al2O3) fabricated by atomic layer deposition (ALD) process is employed as an encapsulation to improve the performance of carbon nanotube thin-film transistor (CNT-TFT). The outstanding hysteresis suppression ability of laminated HfO2/Al2O3 is demonstrated in the transfer characteristic of thin-film transistor (TFT) devices, with the threshold voltage variation ($\Delta{V}_{\text {th}}$ ) of different scanning directions decreasing from ~11.06 to ~0.48 V after encapsulation, which is mainly attributed to the removal of water and oxygen molecules adsorption on the carbon nanotubes (CNTs) backchannel surface and the passivation effect to the defects at the interface between the CNTs and the gate insulator. It appears that the CNT-TFT with laminated HfO2/Al2O3 with an optimized 5 nm/5 nm structure exhibits excellent hysteresis suppression ability and performance improvement. In addition, the TFT devices with the optimal laminated HfO2/Al2O3 layers also show great reliability and gate bias stress stability.

engineering, electrical & electronic,physics, applied
A novel thin-film transistor using carbon nanotubes as both channel and electrodes

He Peijian,Deng Yanyan,Chen Chun,Zhang Min

DOI: https://doi.org/10.1109/EDSSC.2016.7785199

2016-01-01

Abstract:A novel structure of carbon nanotube thin-film transistors (CNT-TFTs) with carbon nanotubes as source and drain electrodes has been proposed and realized. Single-walled carbon nanotubes (SWNTs) with 95% semiconducting purity work as the channel layer while semiconducting-metallic-mixed SWNTs with 33% semiconducting purity work as the source and drain electrodes. Transconductance of 5.52×10 -7 S and on/off current ratio of 10 5 have been obtained for the devices. The electrical performance is comparable to that of the CNT-TFTs with Titanium electrodes. By using CNTs as the electrode, the CNT-TFTs are closer to future flexible and transparent applications by one more step. Besides, the fabrication process of the devices is facile and low-cost.
Ink-Jet Printed Thin-Film Transistors with Carbon Nanotube Channels Shaped in Long Strips

Jiantong Li,Tomas Unander,Ana Lopez Cabezas,Botao Shao,Zhiying Liu,Yi Feng,Esteban Bernales Forsberg,Zhi-Bin Zhang,Indrek Jogi,Xindong Gao,Mats Boman,Li-Rong Zheng,Mikael Ostling,Hans-Erik Nilsson,Shi-Li Zhang

DOI: https://doi.org/10.1063/1.3569842

IF: 2.877

2011-01-01

Journal of Applied Physics

Abstract:The present work reports on the development of a class of sophisticated thin-film transistors (TFTs) based on ink-jet printing of pristine single-walled carbon nanotubes (SWCNTs) for the channel formation. The transistors are manufactured on oxidized silicon wafers and flexible plastic substrates at ambient conditions. For this purpose, ink-jet printing techniques are developed with the aim of high-throughput production of SWCNT thin-film channels shaped in long strips. Stable SWCNT inks with proper fluidic characteristics are formulated by polymer addition. The present work unveils, through Monte Carlo simulations and in light of heterogeneous percolation, the underlying physics of the superiority of long-strip channels for SWCNT TFTs. It further predicts the compatibility of such a channel structure with ink-jet printing, taking into account the minimum dimensions achievable by commercially available printers. The printed devices exhibit improved electrical performance and scalability as compared to previously reported ink-jet printed SWCNT TFTs. The present work demonstrates that ink-jet printed SWCNT TFTs of long-strip channels are promising building blocks for flexible electronics.
Fully transparent solution-processed carbon nanotube thin film transistors on a flexible substrate

Deng Yanyan,Chan Mansun,Zhang Min

DOI: https://doi.org/10.1109/NANO.2016.7751314

2016-01-01

Abstract:Fully transparent solution-processed carbon nanotube thin film transistors (CNT-TFTs) on flexible substrate are proposed and fabricated by a facile and low-cost process. By using 95%-semiconducting enriched carbon nanotubes as channel and transparent indium tin oxide as gate, source and drain electrodes, CNT-TFTs with a high on/off current ratio of 2.68×10 6 , a low threshold voltage of 0.38 V, a steep subthreshold swing of 0.28 V/dec, a good device mobility of 2.95 cm 2 /vs as well as a high transparency of 91.1% has been achieved. In addition, the whole fabrication of solution-processed CNT-TFTs involves no high temperature and complicated processing, which satisfies the manufacturing requirements for future transparent and flexible electronics.
Thin-film Transistors Based on Poly(3,3‴-Dialkyl-quarterthiophene) and Zinc Oxide Nanowires with Improved Ambient Stability

Sara M. C. Vieira,Gen-Wen Hsieh,Husnu E. Unalan,Sefa Dag,Gehan A. J. Amaratunga,William I. Milne

DOI: https://doi.org/10.1063/1.3560982

IF: 4

2011-01-01

Applied Physics Letters

Abstract:The ambient stability of thin-film transistors (TFTs) based on zinc oxide (ZnO) nanowires embedded in poly(3,3‴-dialkyl-quarterthiophene) was monitored through time dependence of electrical characteristics over a period of 16 months. The hybrid-based TFT showed an initial hole mobility in the linear regime of 4.2×10−4 cm2/V s. After 16 months storage in ambient conditions (exposed to air, moisture, and light) the mobility decreased to 2.3×10−5 cm2/V s. Comparatively the organic-based TFT lost total carrier mobility after one month storage making the hybrid-based TFTs more suitable for transistor applications when improved stability combined with structural flexibility are required.
High-performance thin-film transistors using semiconductor nanowires and nanoribbons

Xiangfeng Duan,Chunming Niu,Vijendra Sahi,Jian Chen,J Wallace Parce,Stephen Empedocles,Jay L Goldman

DOI: https://doi.org/10.1038/nature01996

IF: 64.8

2003-09-18

Nature

Abstract:Thin-film transistors (TFTs) are the fundamental building blocks for the rapidly growing field of macroelectronics. The use of plastic substrates is also increasing in importance owing to their light weight, flexibility, shock resistance and low cost. Current polycrystalline-Si TFT technology is difficult to implement on plastics because of the high process temperatures required. Amorphous-Si and organic semiconductor TFTs, which can be processed at lower temperatures, but are limited by poor carrier mobility. As a result, applications that require even modest computation, control or communication functions on plastics cannot be addressed by existing TFT technology. Alternative semiconductor materials that could form TFTs with performance comparable to or better than polycrystalline or single-crystal Si, and which can be processed at low temperatures over large-area plastic substrates, should not only improve the existing technologies, but also enable new applications in flexible, wearable and disposable electronics. Here we report the fabrication of TFTs using oriented Si nanowire thin films or CdS nanoribbons as semiconducting channels. We show that high-performance TFTs can be produced on various substrates, including plastics, using a low-temperature assembly process. Our approach is general to a broad range of materials including high-mobility materials (such as InAs or InP).
Fully-Solution-Processed Enhancement-Mode Complementary Metal-Oxide-Semiconductor Carbon Nanotube Thin Film Transistors Based on BiI3 -Doped Crosslinked Poly(4-Vinylphenol) Dielectrics for Ultralow-Power Flexible Electronics

Min Li,Yuxiao Fang,Shuangshuang Shao,Xin Wang,Zhaofeng Chen,Jiaqi Li,Weibing Gu,Wenming Yang,Wanzhen Xu,Hua Wang,Jianwen Zhao

DOI: https://doi.org/10.1002/smll.202207311

IF: 13.3

Small

Abstract:The threshold voltage (Vth ) adjustment of complementary metal-oxide-semiconductor (CMOS) thin film transistors (TFTs) is one of the research hotspots due to its key role in energy consumption control of CMOS circuits. Here, ultralow-power flexible CMOS circuits based on well-matched enhancement-mode (E-mode) CMOS single-walled carbon nanotube (SWCNT) TFTs are successfully achieved through tuning the work function of gate electrodes, electron doping, and printing techniques. E-mode P-type CMOS SWCNT TFTs with the full-solution procedure are first obtained through decreasing the work function of Ag gate electrodes directly caused by the deposition of bismuth iodide (BiI3 )-doped solid-state electrolyte dielectrics. After synthetic optimization of dielectric compositions and semiconductor printing process, the flexible printed E-mode SWCNT TFTs show the high Ion /Ioff ratios of ≈106 , small subthreshold swing (SS) of 70-85 mV dec-1 , low operating voltages of ≈0.5 to -1.5 V, good stability and excellent mechanical flexibility during 10 000 bending cycles. E-mode N-type SWCNT TFTs are then selectively achieved via printing the polarity conversion ink (2-Amino-2-methyl-1-propanol (AMP) as electron doping agent) in P- type TFT channels. Last, printed SWCNT CMOS inverters are successfully constructed with full rail-to-rail output characteristics and the record unit static power consumption of 6.75 fW µm-1 at VDD of 0.2 V.
Inverse Hysteresis and Ultrasmall Hysteresis Thin‐Film Transistors Fabricated Using Sputtered Dielectrics

Yudan Zhao,Yujia Huo,Xiaoyang Xiao,Yingcheng Wang,Tianfu Zhang,Kaili Jiang,Jiaping Wang,Shoushan Fan,Qunqing Li

DOI: https://doi.org/10.1002/aelm.201600483

IF: 6.2

2017-01-01

Advanced Electronic Materials

Abstract:Large current hysteresis is observed in carbon nanotube (CNT) transistors and usually shows as a positive threshold voltage shift when the gate sweeping direction changes from positive to negative. This paper reports fabrication of inverse hysteresis CNT thin‐film transistors (TFTs) using magnetron sputtered oxide as a dielectric. Stacking of the sputtered dielectric with dielectrics deposited by other methods, such as atomic layer deposition, can effectively reduce or even eliminate the hysteresis. This can be explained as a combination of the effects of surface and interface trapped charges. Additionally, this hysteresis reduction method is widely compatible with various CNT‐TFT structures and types and is even suitable for MoS2 TFTs. The output characteristics and frequency responses of large and small hysteresis devices are compared and show that the small‐hysteresis inverter has lower distortion, and that its maximum operating frequency is nearly five times larger than that of TFTs with normal hysteresis.
Intrinsically stretchable all-carbon-nanotube transistors with styrene-ethylene-butylene-styrene as gate dielectrics integrated by photolithography-based process

Haoxuan Jiao,Min Zhang,Chunhui Du,Ziwei Zhang,Weihong Huang,Qiuyue Huang

DOI: https://doi.org/10.1039/c9ra10534d

IF: 4.036

2020-01-01

RSC Advances

Abstract:In recent years, stretchable electronics have attracted great attention because of their broad application prospects such as in the field of wearable electronics, skin-like electronics, medical transplantation and human-machine interaction. Intrinsically stretchable transistors have advantages in many aspects. However, integration of intrinsically stretchable layers to achieve stretchable transistors is still challenging. In this work, we combine the excellent electrical and mechanical properties of carbon nanotubes with excellent dielectric and mechanical properties of styrene-ethylene-butylene-styrene (SEBS) to realize intrinsically stretchable thin film transistors (TFTs). This is the first time that all the intrinsically stretchable components have been combined to realize multiple stretchable TFTs in a batch by photolithography-based process. In this process, a plasma resistant layer has been introduced to protect the SEBS dielectric from being damaged during the etching process so that the integration can be achieved. The highly stretchable transistors show a high carrier mobility of up to 10.45 cm(2) V-1 s(-1). The mobility maintains 2.01 cm(2) V-1 s(-1) even after the transistors are stretched by over 50% for more than 500 times. Moreover, the transistors have been scaled to channel length and width of 56 mu m and 20 mu m, respectively, which have a higher integration level. The stretchable transistors have light transmittance of up to 60% in the visible range. The proposed method provides an optional solution to large-scale integration for stretchable electronics.
Recycling Strategy for Fabricating Low-Cost and High-Performance Carbon Nanotube TFT Devices.

Xiaoqin Yu,Dan Liu,Lixing Kang,Yi Yang,Xiaopin Zhang,Qianjin Lv,Song Qiu,Hehua Jin,Qijun Song,Jin Zhang,Qingwen Li

DOI: https://doi.org/10.1021/acsami.7b02964

IF: 9.5

2017-01-01

ACS Applied Materials & Interfaces

Abstract:High-purity semiconducting single-walled carbon nanotubes (s-SWNTs) can be obtained by conjugated polymer wrapping. However, further purification of sorted s-SWNTs and high costs of raw materials are still challenges to practical applications. It is inevitable that a lot of polymers still cover the surface of s-SWNTs after separation, and the cost of the polymer is relatively higher than that of SWNTs. Here, we demonstrated a facile isolated process to improve the quality of s-SWNT solutions and films significantly. Compared with the untreated s-SWNTs, the contact resistance between the s-SWNT and the electrode is reduced by 20 times, and the thin-film transistors show 300% enhancement of current density. In this process, most of the polymers can be recycled and reused directly without any purification, which can greatly decrease the cost for s-SWNT separation. The results presented herein demonstrate a new scalable and low-cost approach for large-scale application of s-SWNTs in the electronics industry.
Carbon Nanotubes for Thin Film Transistor: Fabrication, Properties, and Applications

Yucui Wu,Xinnan Lin,Min Zhang

DOI: https://doi.org/10.1155/2013/627215

IF: 3.791

2013-01-01

Journal of Nanomaterials

Abstract:We review the present status of single-walled carbon nanotubes (SWCNTs) for their production and purification technologies, as well as the fabrication and properties of single-walled carbon nanotube thin film transistors (SWCNT-TFTs). The most popular SWCNT growth method is chemical vapor deposition (CVD), including plasma-enhanced chemical vapor deposition (PECVD), floating catalyst chemical vapor deposition (FCCVD), and thermal CVD. Carbon nanotubes (CNTs) used to fabricate thin film transistors are sorted by electrical breakdown, density gradient ultracentrifugation, or gel-based separation. The technologies of applying CNT random networks to work as the channels of SWCNT-TFTs are also reviewed. Excellent work from global researchers has been benchmarked and analyzed. The unique properties of SWCNT-TFTs have been reviewed. Besides, the promising applications of SWCNT-TFTs have been explored. Finally, the key issues to be solved in future have been summarized.
Controllable Hysteresis and Threshold Voltage of Single-Walled Carbon Nano-tube Transistors with Ferroelectric Polymer Top-Gate Insulators

Yi-Lin Sun,Dan Xie,Jian-Long Xu,Cheng Zhang,Rui-Xuan Dai,Xian Li,Xiang-Jian Meng,Hong-Wei Zhu

DOI: https://doi.org/10.1038/srep23090

IF: 4.6

2016-01-01

Scientific Reports

Abstract:Double-gated field effect transistors have been fabricated using the SWCNT networks as channel layer and the organic ferroelectric P(VDF-TrFE) film spin-coated as top gate insulators. Standard photolithography process has been adopted to achieve the patterning of organic P(VDF-TrFE) films and top-gate electrodes, which is compatible with conventional CMOS process technology. An effective way for modulating the threshold voltage in the channel of P(VDF-TrFE) top-gate transistors under polarization has been reported. The introduction of functional P(VDF-TrFE) gate dielectric also provides us an alternative method to suppress the initial hysteresis of SWCNT networks and obtain a controllable ferroelectric hysteresis behavior. Applied bottom gate voltage has been found to be another effective way to highly control the threshold voltage of the networked SWCNTs based FETs by electrostatic doping effect.

Hysteresis-free Thin-Film Transistors Achieved by Novel Solution-Processing of Nanotubes/polymer Composites

Ultrathin High-Mobility SWCNT Transistors with Electrodes Printed by Nanoporous Stamp Flexography

SMALL-hysteresis thin-film transistors achieved by facile dip-coating of nanotube/polymer composite.

Thin-Film Field-Effect Transistors Based on Composites of Semiconducting Polymer and Carbon Nanotubes

Solution-Processable Nanotube/Polymer Composite for High-Performance Tfts

Thin‐Film Transistors: Polyvinyl Alcohol/SiO2 Hybrid Dielectric for Transparent Flexible/Stretchable All‐Carbon‐Nanotube Thin‐Film‐Transistor Integration (adv. Electron. Mater. 5/2020)

Solution-Processable High-Purity Semiconducting SWCNTs for Large-Area Fabrication of High-Performance Thin-Film Transistors.

Synthesis of ZnO Nanowires for Thin Film Network Transistors

Hysteresis-free carbon nanotube field effect transistors without any post-treatment.

Hysteresis Suppression of Carbon Nanotube Thin-Film Transistor Using Laminated HfO2/Al2O3 by ALD

A novel thin-film transistor using carbon nanotubes as both channel and electrodes

Ink-Jet Printed Thin-Film Transistors with Carbon Nanotube Channels Shaped in Long Strips

Fully transparent solution-processed carbon nanotube thin film transistors on a flexible substrate

Thin-film Transistors Based on Poly(3,3‴-Dialkyl-quarterthiophene) and Zinc Oxide Nanowires with Improved Ambient Stability

High-performance thin-film transistors using semiconductor nanowires and nanoribbons

Fully-Solution-Processed Enhancement-Mode Complementary Metal-Oxide-Semiconductor Carbon Nanotube Thin Film Transistors Based on BiI3 -Doped Crosslinked Poly(4-Vinylphenol) Dielectrics for Ultralow-Power Flexible Electronics

Inverse Hysteresis and Ultrasmall Hysteresis Thin‐Film Transistors Fabricated Using Sputtered Dielectrics

Intrinsically stretchable all-carbon-nanotube transistors with styrene-ethylene-butylene-styrene as gate dielectrics integrated by photolithography-based process

Recycling Strategy for Fabricating Low-Cost and High-Performance Carbon Nanotube TFT Devices.

Carbon Nanotubes for Thin Film Transistor: Fabrication, Properties, and Applications

Controllable Hysteresis and Threshold Voltage of Single-Walled Carbon Nano-tube Transistors with Ferroelectric Polymer Top-Gate Insulators