Abstract:A deep understanding of the interface states in metal-oxide-semiconductor (MOS) structures is the premise of improving the gate stack quality, which sets the foundation for building field-effect transistors (FETs) with high performance and high reliability. Although MOSFETs built on aligned semiconducting carbon nanotube (A-CNT) arrays have been considered ideal energy-efficient successors to commercial silicon (Si) transistors, research on the interface states of A-CNT MOS devices, let alone their optimization, is lacking. Here, we fabricate MOS capacitors based on an A-CNT array with a well-designed layout and accurately measure the capacitance-voltage and conductance-voltage (C-V and G-V) data. Then, the gate electrostatics and the physical origins of interface states are systematically analyzed and revealed. In particular, targeted improvement of gate dielectric growth in the A-CNT MOS device contributes to suppressing the interface state density (D-it) to 6.1 x 10(11) cm(-2) eV(-1), which is a record for CNT- or low-dimensional semiconductors-based MOSFETs, boosting a record transconductance (g(m)) of 2.42 mS/mu m and an on-off ratio of 10(5). Further decreasing D-it below 1 x 10(11) cm(-2) eV(-1) is necessary for A-CNT MOSFETs to achieve the expected high energy efficiency.

Hysteresis-free carbon nanotube field effect transistors without any post-treatment.

Electrothermal Characterization of Carbon Nanotube Field Effect Transistors (Cntfets)

Investigation on self-heating effect in carbon nanotube field-effect transistors

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

Electrical Hysteresis of Single-Walled Carbon Nanotube Field Effect Transistors and Its Modulation by an External Magnetic Field

Field-Effect Transistors Based on Single-Wall Carbon Nanotubes Bundles

Hysteresis suppression in self-assembled single-wall nanotube field effect transistors

Hysteresis-free Thin-Film Transistors Achieved by Novel Solution-Processing of Nanotubes/polymer Composites

A nanogapped hysteresis-free field-effect transistor

Low Hysteresis Carbon Nanotube Transistors Constructed Via a General Dry-Laminating Encapsulation Method on Diverse Surfaces

Hf-Contacted High-Performance Air-Stable N-Type Carbon Nanotube Transistors

Carbon Nanotube Field Effect Transistors Based on Schottky Contact

Carbon Nanotube Lateral Field Emission Device with Embedded Field Effect Transistor

Ferroelectric Polarization Effect on Hysteresis Behaviors of Single-Walled Carbon Nanotube Network Field-Effect Transistors with Lead Zirconate-Titanate Gating

Controllable Hysteresis and Threshold Voltage of Single-Walled Carbon Nano-tube Transistors with Ferroelectric Polymer Top-Gate Insulators

Nanotube and Nanowire Transistors

Ultraclean Individual Suspended Single-Walled Carbon Nanotube Field Effect Transistor

High-Performance, Hysteresis-Free Carbon Nanotube FETs via Directed Assembly

Single- and multi-wall carbon nanotube field-effect transistors

Enhanced On-state Current in Barrier-free Carbon Heterojunction Tunneling Field-effect Transistor

High performance field effect transistors made of a multiwall nanotube intramolecular junction