Abstract:Emerging macro- and flexible electronic applications such as foldable displays, artificial skins, and smart textiles grow rapidly into the market. Solution-processed thin-film transistors (TFTs) based on single-walled carbon nanotubes (SWCNTs) as the semiconductor channel can offer high performance, low cost and versatility for macro- and flexible electronics. Major challenges to the development of SWCNT-based TFTs include: (i) hysteresis in their transfer characteristics (TCs), (ii) difficulties in simultaneous achievements of high on-state current Ion and large on/off current ratio Ion/Ioff, and (iii) poor uniformity and scalability resulting from the poor solution processability. This thesis aims at developing reliable and simple process techniques for fabrication of the SWCNT-based TFTs that possess the afore-stated characteristics. It presents a systematic investigation to not only explore the fundamental device physics, but also develop novel fabrication methods for enhancement of device performance.First, issues related to the measurement of gate capacitance (Cg), the determination of current scalability, and the hysteresis in randomly networked SWCNTs are properly addressed. This leads to the establishment of a comprehensive methodology for extraction of carrier mobility (μ) for the SWCNT-based TFTs. In detail, the large hysteresis is effectively suppressed by adopting a pulsed drain current-gate voltage (Id-Vg) method in which the polarity of the gate pulse was alternating during the measurement. Different from most reported methods in the literature, Cg is accurately determined in our case by performing direct capacitance-voltage measurement on the TFTs.Second, with the employment of functional composites comprising SWCNTs embedded in a semiconducting polymer, poly-9,9 dioctyl-fluorene-cobithiophene (F8T2), as the semiconducting channel via facile solution processes under ambient conditions, the fabricated TFTs exhibit outstanding electrical performance with: (i) negligible hysteresis, (ii) high μ, (iii) high Ion and large Ion/Ioff, (iv) excellent uniformity and dimensional scalability, and (v) good stability. These highly desired performance parameters are achieved owing to an ideal composite structure with metallic SWCNTs being selectively removed and the remaining semiconducting SWCNTs being well wrapped by the polymer matrix.Finally, the developed TFTs basing on the SWCNT/F8T2 composite are used as the building block to construct some logic circuits. The resultant inverters, NANDs, and NORs are found to retain the small-hysteresis characteristics, with a cut-off frequency reaching 100 kHz. The results presented in this thesis advance the state-of-art SWCNT-based macroelectronics.

Solution-Processable High-Purity Semiconducting SWCNTs for Large-Area Fabrication of High-Performance Thin-Film Transistors.

Solution-Processable Nanotube/Polymer Composite for High-Performance Tfts

Water-Assisted Preparation of High-Purity Semiconducting (14,4) Carbon Nanotubes

Recycling Strategy for Fabricating Low-Cost and High-Performance Carbon Nanotube TFT Devices.

High‐Purity Monochiral Carbon Nanotubes with a 1.2 Nm Diameter for High‐Performance Field‐Effect Transistors

Thin-Film Field-Effect Transistors Based on Composites of Semiconducting Polymer and Carbon Nanotubes

SMALL-hysteresis thin-film transistors achieved by facile dip-coating of nanotube/polymer composite.

Using Nanoscale Thermocapillary Flows to Create Arrays of Purely Semiconducting Single-Walled Carbon Nanotubes

Wafer Scale Fabrication Of Carbon Nanotube Thin Film Transistors With High Yield

Single-Walled Carbon Nanotube Thin Film with High Semiconducting Purity by Aerosol Etching toward Thin-Film Transistors

Solution processed 1D polymer/SWCNT composite arrays for high-performance field effect transistors

Fully transparent solution-processed carbon nanotube thin film transistors on a flexible substrate

Rapid annealing and cooling induced surface cleaning of semiconducting carbon nanotubes for high-performance thin-film transistors

Carbon Nanotubes for Thin Film Transistor: Fabrication, Properties, and Applications

Hysteresis-free Thin-Film Transistors Achieved by Novel Solution-Processing of Nanotubes/polymer Composites

Transparent All-Carbon-Nanotube Thin-film Transistors

Carbon Nanotube Thin Film Transistors Fabricated by an Etching Based Manufacturing Compatible Process

Electronically Pure Single-Chirality Semiconducting Single-Walled Carbon Nanotube for Large-Scale Electronic Devices

Dispersion of High-Purity Semiconducting Arc-Discharged Carbon Nanotubes Using Backbone Engineered Diketopyrrolopyrrole (Dpp)-Based Polymers

Scalable Preparation of High-Density Semiconducting Carbon Nanotube Arrays for High-Performance Field-Effect Transistors.

High Throughput Production of Transparent Conductive Single-Walled Carbon Nanotube Films via Advanced Floating Catalyst Chemical Vapor Deposition