Abstract:As the third generation semiconductor material,gallium nitride(GaN)is widely used in electronic devices and optoelectronic devices due to its excellent characteristics such as wide band gap,high breakdown field strength,high electron mobility,outstanding thermal conductivity,and direct band gap.However,it is difficult to obtain high quality single crystal GaN thin films due to the mismatch between GaN material and substrate in early phase of preparation.Until the two-step growth method is proposed,in which the nucleation layer of aluminum nitride(AlN)is firstly grown on the substrate at low temperature,and then GaN is grown at high temperature,the quality of GaN is greatly improved.Nowadays,AlN nucleation layers are fabricated via magnetron sputtering and molecular beam epitaxy,etc.To further improve the quality of GaN crystals,this study used plasma-enhanced atomic layer deposition(PEALD)method to prepare AlN nucleation layers for the epitaxial growth of GaN on a two-inch c-plane sapphire substrate.Compared with the magnetron sputtering method and molecular beam epitaxy method,the crystal quality of AlN prepared by PEALD method displays advantages of simple process,low cost and high yield.Measurements on deposited AlN films show that the deposition rate is 0.1 nm/cycle and the films have island-like structures varying with its thickness.Epitaxial GaN measurements show that GaN epitaxial layer can obtain the smoothest surface with a root mean square roughness of 0.272 nm,the best optical properties,and the lowest dislocation density when AlN is deposited with a thickness of 20.8 nm.In conclusion,a new method of epitaxial single crystal GaN on AlN prepared by PEALD has been built with optimal deposition at 20.8 nm of AlN to obtain high quality GaN thin films,it can be used to prepare high electron mobility transistors and light-emitting diodes.

High-Quality Ga-Rich Algan Grown on Trapezoidal Patterned Gan Template Using Super-Short Period Aln/Gan Superlattices for Rapid Coalescence

Gan Grown on Ain/Sapphire Templates

Growth mechanisms of GaN epitaxial films grown on ex situ low-temperature AlN templates on Si substrates by the combination methods of PLD and MOCVD

Improved Crystal Quality of Gan Film with the In-Plane Lattice-Matched In0.17al0.83n Interlayer Grown on Sapphire Substrate Using Pulsed Metal Organic Chemical Vapor Deposition

Impact of GaN Transition Layers in the Growth of GaN Epitaxial Layer on Silicon

High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer

Air-bridged Lateral Growth of Crack-Free Al0.24Ga0.76N on Highly Relaxed Porous GaN

Algan/Gan Heterostructure Grown By Metalorganic Vapor Phase Epitaxy

Study on Growing Thick AlGaN Layer on C-Plane Sapphire Substrate and Free-Standing GaN Substrate

Investigation of GaN with Low Threading Dislocation Density Grown on Graphene/Sputtered AlN Composite Substrate

Enhancing two-dimensional growth of high-temperature AlN buffer to improve the quality of GaN on Si grown by ex situ two-step method

Structural and Stress Properties of AlGaN Epilayers Grown on AlN-Nanopatterned Sapphire Templates by Hydride Vapor Phase Epitaxy

Structural and Optical Characteristics of Al (X) Ga1-X N/Aln Superlattice

High Quality InAlN/GaN Heterostructures Grown on Sapphire by Pulsed Metal Organic Chemical Vapor Deposition

Growth and Characterization of Algan/Gan Superlattices

Epitaxy Single Crystal GaN on AlN Prepared by Plasma-enhanced Atomic Layer Deposition

Nanoair-Bridged Lateral Overgrowth of Gan on Ordered Nanoporous Gan Template

Crack-free Thick AlGaN Grown on Sapphire Using AlN/AlGaN Superlattices for Strain Management

Improved Characteristics of (112‾2) Al0.62Ga0.38N Film Grown with Pulsed Flow Growth Technique

Algan Layers Grown on Gan Using Strain-Relief Interlayers

Variational Al Composition Crack-free AlGaN Films Grown by Metal Organic Chemical Vapor Deposition