Abstract:Contact engineering on monolayer layer (ML) semiconducting transition metal dichalcogenides (TMDs) is considered the most challenging problem toward using these materials as a transistor channel in future advanced technology nodes. The typically observed strong Fermi-level pinning induced in part by the reaction of the source/drain contact metal and the ML TMD frequently results in a large Schottky barrier height, which limits the electrical performance of ML TMD field-effect transistors (FETs). However, at a microscopic level, little is known about how interface defects or reaction sites impact the electrical performance of ML TMD FETs. In this work, we have performed statistically meaningful electrical measurements on at least 120 FETs combined with careful surface analysis to unveil contact resistance dependence on interface chemistry. In particular, we achieved a low contact resistance for ML MoS2 FETs with ultrahigh-vacuum (UHV, 3 × 10-11 mbar) deposited Ni contacts, ∼500 Ω·μm, which is 5 times lower than the contact resistance achieved when deposited under high-vacuum (HV, 3 × 10-6 mbar) conditions. These electrical results strongly correlate with our surface analysis observations. X-ray photoelectron spectroscopy (XPS) revealed significant bonding species between Ni and MoS2 under UHV conditions compared to that under HV. We also studied the Bi/MoS2 interface under UHV and HV deposition conditions. Different from the case of Ni, we do not observe a difference in contact resistance or interface chemistry between contacts deposited under UHV and HV. Finally, this article also explores the thermal stability and reliability of the two contact metals employed here.

Contact Resistance Reduction on Layered Mos2 by Ar Plasma Pre-Treatment

Contact resistance reduction of carbon nanotube via through O2 plasma post-synthesis treatment

P‐1.3: The conductivity modulation of amorphous zinc tin oxide thin film by Ar plasma treatment

The Optimization of Contact Interface Between Metal/mos2 FETs by Oxygen Plasma Treatment

Reducing contact resistance of MoS2-based field effect transistors through uniform interlayer insertion via atomic layer deposition

Remote N-2 Plasma Treatment to Deposit Ultrathin High-K Dielectric As Tunneling Contact Layer for Single-Layer MoS2 MOSFET

The Investigation of Ar Plasma Treatment on the Contact Resistance Between Metal-Metal by a Simple Metal Bonding Simulation Approach

Contact Resistance Optimization in MoS${_2}$ Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications

Study on the Resistance Distribution at the Contact Between Molybdenum Disulfide and Metals.

Low Contact Resistance on Monolayer MoS2 Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts

The Evolution of MoS2 Properties under Oxygen Plasma Treatment and Its Application in MoS2 Based Devices

Charge neutral MoS2 field effect transistors through oxygen plasma treatment

Effective Contact Resistivity Reduction for Mo/Pd/n-In0.53Ga0.47 As Contact

Titanium Contacts to MoS2 with Interfacial Oxide: Interface Chemistry and Thermal Transport

Low-resistivity Ohmic contacts of Ti/Al on few-layered 1T'-MoTe2/2H-MoTe2 heterojunctions grown by chemical vapor deposition

MoSi2 Addition for High Ablation Resistance of Dense ZrB2-based Composite Coating Prepared by Very Low-Pressure Plasma Spraying

Plasma-assisted friction control of 2D MoS 2 made by atomic layer deposition

Comparison of contact metals evaporated onto monolayer molybdenum disulfide

Contact Optimisation Strategy for Wafer-Scale Field-Effect Transistors Based on Two-Dimensional Semiconductors

Controllable preparation of monolayer MoO3/MoO by using plasma oxidation and atomic layer etching

Enhanced contact resistance reduction in MoS2 transistors via ultrathin LiPON electrode interface doping