Abstract:Molybdenum disulfide (MoS2), a member of the transition-metal dichalcogenides (TMDs) family, is a semiconducting layered matierial consisting of two atomic layers of S atoms and Mo atoms. Comparing with semimetal graphene, its relatively large band gap makes MoS2 more suitable for applications in logic cricuit. Besides, strong spin orbit coupling and special symmetric structure give MoS2 many intriguing physical and chemical properties. However, contacts between metals and MoS2 remain a critical issue which hinders not only the investigation of the intrinsic properties of MoS2 but also its applications. Therefore, it is urgent to find the technique that can improve the contact condition between metal and MoS2. In this work, using MoO3/Au as the electrode of MoS2 based field effect transistors (FETs), we obtained N-type MoS2 FETs with improved contact conditions. The transport properties of these devices at different temperatures is also investigated. We demonstrated that the Schottky contact of the MoS2 FETs can be well improved by the interlayer MoO3 between MoS2 and metal electrodes: for device with 2 nm thick channel MoS2, the room temperature mobility can be as high as 25 cm2 V–1 s–1, 16 times higher than device without MoO3 contact; for device with 8 nm thick channel MoS2, the highest value of the low temperature mobility is as high as 100 cm2 V–1 s–1. Therefore, we extracted the intrinsic low temperature property of MoS2 FETs: the transport property of few layer MoS2 devices is dominated by the scattering of charge carriers from defect or charge traps; such scattering is weakened as the carrier density increases and screening is improved. The technique demonstrated in this work can also be applied to other TMDs field effect devices.

Comparison of contact metals evaporated onto monolayer molybdenum disulfide

Low Contact Resistance on Monolayer MoS2 Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts

Study on the Resistance Distribution at the Contact Between Molybdenum Disulfide and Metals.

Metal Contacts On Physical Vapor Deposited Monolayer Mos

Influence of Metal-Mos2 Interface on MoS2 Transistor Performance: Comparison of Ag and Ti Contacts.

Statistical Analysis of Contacts to Synthetic Monolayer MoS2

Investigating Metal Dopants for Lowering the Contact Resistance of Top Gold Contacted Monolayer MoS2

Titanium Contacts to MoS2 with Interfacial Oxide: Interface Chemistry and Thermal Transport

Investigation of Interface Interactions Between Monolayer MoS 2 and Metals: Implications on Strain and Surface Roughness

Designing electrical contacts to MoS$_2$ monolayers: A computational study

Improving Electric Contacts to Two-Dimensional Semiconductors

Influence of MoS 2 -metal interface on charge injection: a comparison between various metal contacts

The Contact Properties of Monolayer and Multilayer MoS2-Metal van der Waals Interfaces

Ultralow Contact Resistance and Efficient Ohmic Contacts in MoGe 2 P 4 –Metal Contacts

Low Resistance Metal Contacts to MoS2 Devices with Nickel-Etched-Graphene Electrodes

Transport Properties of MoO&lt;sub&gt;3&lt;/sub&gt; Contacted Few-Layer MoS&lt;sub&gt;2&lt;/sub&gt; N-type Field-Effect Transistor

Contact Resistance Optimization in MoS${_2}$ Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications

Electron transport across a metal/MoS$_2$ interface: dependence on contact area and binding distance

Interfacial Properties of Monolayer and Bilayer MoS 2 Contacts with Metals: Beyond the Energy Band Calculations

Reinterpreting Low Resistance in Sb–MoS2 Ohmic Contacts by Means of Ab Initio Transport Simulations

Interfacial Properties of Monolayer MoSe2–Metal Contacts