Abstract:One of the primary factors hindering the development of 2D material-based devices is the difficulty of overcoming fabrication processes, which pose a challenge in achieving low-resistance contacts. Widely used metal deposition methods lead to unfavorable Fermi level pinning effect (FLP), which prevents control over the Schottky barrier height at the metal/2D material junction. We propose to harness the FLP effect to lower contact resistance in field-effect transistors (FETs) by using an additional 2D interlayer at the conducting channel and metallic contact interface (under-contact interlayer). To do so, we developed a new approach using the gold-assisted transfer method, which enables the fabrication of heterostructures consisting of TMDs monolayers with complex shapes, prepatterned using e-beam lithography, with lateral dimensions even down to 100 nm. We designed and demonstrated tungsten disulfide (WS2) monolayer-based devices in which the molybdenum disulfide (MoS2) monolayer is placed only in the contact area of the FET, creating an Au/MoS2/WS2 junction, which effectively reduces contact resistance by over 60% and improves the Ion/Ioff ratio 10 times in comparison to WS2-based devices without MoS2 under-contact interlayer. The enhancement in the device operation arises from the FLP effect occurring only at the interface between the metal and the first layer of the MoS2/WS2 heterostructure. This results in favorable band alignment, which enhances the current flow through the junction. To ensure the reproducibility of our devices, we systematically analyzed 160 FET devices fabricated with under-contact interlayer and without it. Statistical analysis shows a consistent improvement in the operation of the device and reveals the impact of contact resistance on key FET performance indicators.

Reinterpreting Low Resistance in Sb–MoS2 Ohmic Contacts by Means of Ab Initio Transport Simulations

Low Contact Resistance on Monolayer MoS2 Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts

Improving Electric Contacts to Two-Dimensional Semiconductors

A "click" Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance.

First-principles study of metal-semiconductor contacts and quantum transport simulations for 5.1-nm monolayer devices

Contact Resistance Optimization in MoS${_2}$ Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications

Contact Resistance Engineering in WS2-Based FET with MoS2 Under-Contact Interlayer: A Statistical Approach

ZrTe2 Compound Dirac Semimetal Contacts for High-Performance MoS2 Transistors.

Comparison of contact metals evaporated onto monolayer molybdenum disulfide

Distinct contact scaling effects in MoS2 Transistors revealed with asymmetrical contact measurements

Enhanced Conductivity Along Lateral Homojunction Interfaces of Atomically Thin Semiconductors

Comparative study of the micro-mechanism of charge redistribution at metal-semiconductor and semimetal-semiconductor interfaces: Pt(Ni)-MoS2 and Bi-MoS2(WSe2) as the prototype

Quantification of the sheet resistance between two-dimensional semiconductors and semi-metals by a contact-end-resistance method

Toward High-mobility and Low-power 2D MoS2 Field-effect Transistors

CVD Graphene Contacts for Lateral Heterostructure MoS_2 Field Effect Transistors

Statistical Analysis of Contacts to Synthetic Monolayer MoS2

Approaching Ohmic Contacts for Ideal Monolayer MoS2 Transistors Through Sulfur-Vacancy Engineering

Interfacial Properties of Monolayer and Bilayer MoS 2 Contacts with Metals: Beyond the Energy Band Calculations

Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations

Approaching the quantum limit in two-dimensional semiconductor contacts

Tunable Contact Resistance in Transition Metal Dichalcogenide Lateral Heterojunctions