Abstract:A finite Schottky barrier and large contact resistance between monolayer MoS2 and electrodes are the major bottlenecks in developing high-performance field-effect transistors (FETs) that hinder the study of intrinsic quantum behaviors such as valley-spin transport at low temperature. A gate-tunable graphene electrode platform has been developed to improve the performance of MoS2 FETs. However, intrinsic misalignment between the work function of pristine graphene and the conduction band of MoS2 results in a large threshold voltage for the FETs, because of which Ohmic contact behaviors are observed only at very high gate voltages and carrier concentrations (~1013 cm-2). Here, we present high-performance monolayer MoS2 FETs with Ohmic contact at a modest gate voltage by using a chemical-vapor-deposited (CVD) nitrogen-doped graphene with a high intrinsic electron carrier density. The CVD nitrogen-doped graphene and monolayer MoS2 hybrid FETs platform exhibited a large negative shifted threshold voltage of -54.2 V and barrier-free Ohmic contact under zero gate voltage. Transparent contact by nitrogen-doped graphene led to a 214% enhancement in the on-current and a four-fold improvement in the field-effect carrier mobility of monolayer MoS2 FETs compared with those of a pristine graphene electrode platform. The transport measurements, as well as Raman and X-ray photoelectron spectroscopy analyses before and after thermal annealing, reveal that the atomic C-N bonding in the CVD nitrogen-doped graphene is responsible for the dominant effects of electron doping. Large-scale nitrogen-doped graphene electrodes provide a promising device platform for the development of high-performance devices and the study of unique quantum behaviors.

Low Resistance Metal Contacts to MoS2 Devices with Nickel-Etched-Graphene Electrodes

Selective Etching in Graphene–mos2 Heterostructures for Fabricating Graphene-Contacted MoS2 Transistors

Low Contact Resistance on Monolayer MoS2 Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts

Towards Barrier Free Contact to MoS2 Using Graphene Electrodes

Two-step Chemical Vapor Deposition Synthesis of NiTe2-MoS2 Vertical Junctions with Improved MoS2 Transistor Performance.

CVD Graphene Contacts for Lateral Heterostructure MoS_2 Field Effect Transistors

MoS2/graphene Lateral Heterostructure Field Effect Transistors.

High-performance monolayer MoS2 field-effect transistor with large-scale nitrogen-doped graphene electrodes for Ohmic contact

Toward barrier free contact to molybdenum disulfide using graphene electrodes.

MoS2 Field-effect Transistors with Graphene/Metal Heterocontacts

Electrode Engineering in MoS2 MOSFET: Different Semiconductor/Metal Interfaces

Performance Upper Limit of Sub-10 nm Monolayer MoS<sub>2</sub> Transistors with MoS<sub>2</sub>-Mo Electrodes

Achieving Low Contact Resistance by Engineering a Metal-Graphene Interface Simply with Optical Lithography.

Achieving low contact resistance through copper-intercalated bilayer MoS2

CVD Graphene Contacts for Lateral Heterostructure MoS${_2}$ Field Effect Transistors

High Mobility WSe2 p- and n-Type Field Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts

Epitaxial van der Waals contacts for low schottky barrier MoS 2 field effect transistors

Graphene-Contacted Ultrashort Channel Monolayer Mos2 Transistors

&Lt;inline-Formula> &Lt;tex-Math Notation="tex">${\rm MoS}_{2}$ &Lt;/tex-Math></inline-formula> Field-Effect Transistors with Graphene/Metal Heterocontacts

Enhanced contact resistance reduction in MoS2 transistors via ultrathin LiPON electrode interface doping

Comparison of contact metals evaporated onto monolayer molybdenum disulfide