Abstract:Molybdenum disulfide (MoS2), a member of the transition-metal dichalcogenides (TMDs) family, is a semiconducting layered matierial consisting of two atomic layers of S atoms and Mo atoms. Comparing with semimetal graphene, its relatively large band gap makes MoS2 more suitable for applications in logic cricuit. Besides, strong spin orbit coupling and special symmetric structure give MoS2 many intriguing physical and chemical properties. However, contacts between metals and MoS2 remain a critical issue which hinders not only the investigation of the intrinsic properties of MoS2 but also its applications. Therefore, it is urgent to find the technique that can improve the contact condition between metal and MoS2. In this work, using MoO3/Au as the electrode of MoS2 based field effect transistors (FETs), we obtained N-type MoS2 FETs with improved contact conditions. The transport properties of these devices at different temperatures is also investigated. We demonstrated that the Schottky contact of the MoS2 FETs can be well improved by the interlayer MoO3 between MoS2 and metal electrodes: for device with 2 nm thick channel MoS2, the room temperature mobility can be as high as 25 cm2 V–1 s–1, 16 times higher than device without MoO3 contact; for device with 8 nm thick channel MoS2, the highest value of the low temperature mobility is as high as 100 cm2 V–1 s–1. Therefore, we extracted the intrinsic low temperature property of MoS2 FETs: the transport property of few layer MoS2 devices is dominated by the scattering of charge carriers from defect or charge traps; such scattering is weakened as the carrier density increases and screening is improved. The technique demonstrated in this work can also be applied to other TMDs field effect devices.

Pressure-mediated Contact Quality Improvement Between Monolayer MoS2 and Graphite

Pressure confinement effect in MoS2 monolayers.

Towards Barrier Free Contact to MoS2 Using Graphene Electrodes

Interlayer Coupling Affected Structural Stability in Ultrathin MoS2: an Investigation by High Pressure Raman Spectroscopy

Low Contact Resistance on Monolayer MoS2 Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts

Toward barrier free contact to molybdenum disulfide using graphene electrodes.

Influence of MoS 2 -metal interface on charge injection: a comparison between various metal contacts

Study on the Resistance Distribution at the Contact Between Molybdenum Disulfide and Metals.

Improving Electron Mobility in MoS2 Field-Effect Transistors by Optimizing the Interface Contact and Enhancing the Channel Conductance Through Local Structural Phase Transition

Low Resistance Metal Contacts to MoS2 Devices with Nickel-Etched-Graphene Electrodes

Improving electron mobility in MoS 2 field-effect transistors by optimizing the interface contact and enhancing the channel conductance through local structural phase transition

Non-invasively Improving the Schottky Barrier of MoS2/metal Contacts by Inserting a SiC Layer

Electrical contacts to few-layer MoS 2 with phase-engineering and metal intercalation for tuning the contact performance

Contact Optimisation Strategy for Wafer-Scale Field-Effect Transistors Based on Two-Dimensional Semiconductors

A Novel Synthesis Method for Large-Area Mos2 Film with Improved Electrical Contact

Junction-configuration-dependent interfacial electronic states of a monolayer MoS2/metal contact

MoS2 Field-effect Transistors with Graphene/Metal Heterocontacts

Transport Properties of MoO&lt;sub&gt;3&lt;/sub&gt; Contacted Few-Layer MoS&lt;sub&gt;2&lt;/sub&gt; N-type Field-Effect Transistor

Electrical Contacts to Few-Layer MoS2 with Phase-Engineering and Metal Intercalation for Tuning the Contact Performance

A "click" Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance.

The Contact Properties of Monolayer and Multilayer MoS2-Metal van der Waals Interfaces