Abstract:Two-dimensional (2D) semiconductors exhibit unique physical properties at the limit of a few atomic layers that are desirable for optoelectronic, spintronic, and electronic applications. Some of these materials require ambient encapsulation to preserve their properties from environmental degradation. While encapsulating 2D semiconductors is essential to device functionality, they also impact heat management due to the reduced thermal conductivity of the 2D material. There are limited experimental reports on in-plane thermal conductivity measurements in encapsulated 2D semiconductors. These measurements are particularly challenging in ultrathin films with a lower thermal conductivity than graphene since it may be difficult to separate the thermal effects of the sample from the encapsulating layers. To address this challenge, we integrated the frequency domain thermoreflectance (FDTR) and optothermal Raman spectroscopy (OTRS) techniques in the same experimental platform. First, we use the FDTR technique to characterize the cross-plane thermal conductivity and thermal boundary conductance. Next, we measure the in-plane thermal conductivity by model-based analysis of the OTRS measurements, using the cross-plane properties obtained from the FDTR measurements as input parameters. We provide experimental data for the first time on the thickness-dependent in-plane thermal conductivity of ultrathin MoS2 nanofilms encapsulated by alumina (Al2O3) and silica (SiO2) thin films. The measured thermal conductivity increased from 26.0 ± 10.0 W m-1 K-1 for monolayer MoS2 to 39.8 ± 10.8 W m-1 K-1 for the six-layer films. We also show that the thickness-dependent cross-plane thermal boundary conductance of the Al2O3/MoS2/SiO2 interface is limited by the low thermal conductance (18.5 MW m-2 K-1) of the MoS2/SiO2 interface, which has important implications on heat management in SiO2-supported and encased MoS2 devices. The measurement methods can be generalized to other 2D materials to study their anisotropic thermal properties.

MoS 2 -graphene in-plane contact for high interfacial thermal conduction

MoS2-graphene in-plane contact for high interfacial thermal conduction

Thermal conduction across the one-dimensional interface between a MoS 2 monolayer and metal electrode

Interfacial Thermal Transport in Monolayer MoS2‐ and Graphene‐Based Devices

Interfacial Thermal Conductance across Graphene/MoS2 van der Waals Heterostructures

Thermal Conductance of the 2D MoS2/h-BN and graphene/h-BN Interfaces

Thermal Management in MoS2 Based Integrated Device Using Near-Field Radiation

Thermal Transport in MoS_2 from Molecular Dynamics Using Different Empirical Potentials

Giant Thermal Conductivity Enhancement in Multilayer MoS2 under Highly Compressive Strain

Theoretical study on thermal properties of molybdenum disulfide/silicon heterostructures

Towards Barrier Free Contact to MoS2 Using Graphene Electrodes

Thermal Transfer in Graphene-Interfaced Materials: Contact Resistance and Interface Engineering.

Toward barrier free contact to molybdenum disulfide using graphene electrodes.

Improved Thermal Dissipation in a MoS 2 Field-Effect Transistor by Hybrid High- k Dielectric Layers

Very High Interfacial Thermal Conductance in Fully hBN-Encapsulated MoS2 van der Waals Heterostructure

Interface contact and modulated electronic properties by in-plain strains in a graphene–MoS2 heterostructure

Quantitative Characterization of the Anisotropic Thermal Properties of Encapsulated Two-Dimensional MoS2 Nanofilms

The effect of binding energy on optimizing the interfacial thermal transport in metal-MoS 2 -dielectric nanostructures

Two-dimensional van der Waals electrical contact to monolayer MoSi$_2$N$_4$

Isotope-Engineering the Thermal Conductivity of Two-Dimensional MoS2.

Toward Optimal Heat Transfer of 2D–3D Heterostructures via van der Waals Binding Effects