Si charge avalanche enhances APD sensitivity beyond 100 GHz

Kah-Wee Ang,Guo-Qiang Lo Patrick

2010-01-01

Laser focus world

Abstract:Made with readily available group IV germanium and silicon materials, a CMOS-compatible waveguide-integrated avalanche photodiode offers a gain-bandwidth of 105 GHz, extending Ge/Si APDs to high-bandwidth chip-to-chip interconnects and high-sensitivity fiber-optic communications.

What problem does this paper attempt to address?

Avalanche-Enhanced Photocurrents in Pin Silicon Waveguides at 1550 Nm Wavelength

Zhao Yong,Xu Chao,Jiang Xiaoqing,Ge Huiliang

DOI: https://doi.org/10.1088/1674-4926/34/6/064009

2013-01-01

Journal of Semiconductors

Abstract:The photocurrent effect in pin silicon waveguides at 1550 nm wavelength is experimentally investigated. The photocurrent is mainly attributed to surface-state absorption,defect-state absorption and/or two-photon absorption.Experimental results show that the photocurrent is enhanced by the avalanche effect.A pin silicon waveguide with an intrinsic region width of 3.4μm and a length of 2000μm achieves a responsivity of 4.6 mA/W and an avalanche multiplication factor of about five.
High-speed waveguide Ge/Si avalanche photodiode with a gain-bandwidth product of 615 GHz

Yuluan Xiang,Hengzhen Cao,Chaoyue Liu,Jingshu Guo,Daoxin Dai

DOI: https://doi.org/10.1364/OPTICA.462609

IF: 10.4

2022-01-01

Optica

Abstract:High-sensitivity and high-bandwidth receivers are always demanded for high-speed optical link systems. As a key element, an avalanche photodiode (APD) is often regarded as one of the most attractive options for achieving high sensitivity owing to the potential high internal gain. In this paper, a 48-GHz waveguide Ge/Si avalanche photodiode operating at the O-band (1310 nm) is designed with a lateral reach-through structure and fabricated with simplified processes. The fabricated APD shows a high primary responsivity of 0.93 A/W at the unit-gain voltage of -4.7 V. It has an avalanche gain of 12.8 and a record gain-bandwidth product of similar to 615 GHz with an input optical power of -15 dBm when operating at a bias voltage of -14 V. The present Ge/Si APD is used successfully for high-speed data receiving, showing a sensitivity improvement about 7.6 dB for KP4-FEC operation (i.e., BER = 2.4 x 10(-4)) with 50 Gbps non-return-to-zero (NRZ) data, compared with the case of using the reference PIN PD on the same chip. The sensitivity of the receiver with the present APD for NRZ signals is about -21.3 dBm, -17.8 dBm, and -12.6 dBm for KP4-FEC operation with different data rates of 50 Gbps, 80 Gbps, and 100 Gbps, while the sensitivity for four-level pulse amplitude modulation signals is about -13.2 dBm and -11.3 dBm for KP4-FEC operation with different data rates of 25 and 50 Gbaud. Such high-performance APDs pave the way to achieve high-speed and high-sensitivity data transmissions. (c) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
Avalanche photodiode with ultrahigh gain–bandwidth product of 1,033 GHz

Yang Shi,Xiang Li,Guanyu Chen,Mingjie Zou,Hongjun Cai,Yu Yu,Xinliang Zhang

DOI: https://doi.org/10.1038/s41566-024-01421-2

IF: 35

2024-04-10

Nature Photonics

Abstract:Avalanche photodiodes (APDs) have enabled highly sensitive photodetection in optical communication, sensing and quantum applications. Great efforts have been focused on improving their gain–bandwidth product (GBP). However, further advance has encountered enormous barriers due to incomplete consideration of the avalanche process. Here we implement a germanium/silicon APD with the GBP breaking through 1 THz. The performance is achieved by introducing two cooperative strategies: precisely shaping the electric field distribution and elaborately engineering the resonant effect in the avalanche process. Experimentally, the presented APD has a primary responsivity of 0.87 A W −1 at unity gain, a large bandwidth of 53 GHz in the gain range of 9–19.5 and an ultrahigh GBP of 1,033 GHz under −8.6 V and at 1,550 nm. For demonstration, data reception of 112 Gb s −1 on–off keying and 200 Gb s −1 four-level pulse amplitude modulation signals per wavelength are achieved with clear eye diagrams and high sensitivity, as well as 800 G reception via four channels. This work provides a potential successor for high-speed optoelectronic devices in next-generation optical interconnects.

optics,physics, applied
High-performance waveguide Ge/Si avalanche photodiode with a lateral separate-absorption-charge-multiplication structure

Yuluan Xiang,Hengzhen Cao,Chaoyue Liu,Daoxin Dai

DOI: https://doi.org/10.1364/OE.450618

IF: 3.8

2022-01-01

Optics Express

Abstract:A high-performance waveguide Ge/Si avalanche photodiode operating at the O-band (1310 nm) is designed with a Ge/Si ridge waveguide defined by two shallow trenches in the active region and fabricated with simplified processes. The device shows a high primary responsivity of 0.96 A/W at the unit-gain voltage of -7.5 V. It has a large 3-dB bandwidth of >27 GHz and a low dark current of 1.8 mu A at a reverse bias voltage of -13 V. When the present Ge/Si APD is used for receiving 25 Gbps data, the eye-diagram is open even for an optical power as low as -18 dBm. Furthermore, 50 Gbps data receiving is also demonstrated with an input optical power of -15 dBm, showing the great potential of the present Ge/Si APD for the application in future high-speed data transmission systems. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
Resonant Si/Ge avalanche photodiode with an ultrahigh gain bandwidth product

john e bowers,daoxin dai,wissem sfar zaoui,yimin kang,michael t morse

DOI: https://doi.org/10.1109/PHOTWTM.2010.5421935

2010-01-01

Abstract:A resonant Ge/Si APD with the SACM (separate-absorption-charge-multiplication) structure is presented. Due to the resonance effect in the avalanche region, the Ge/Si APD shows an ultra-high gain-band products (GBP) (860 GHz). This may make it possible to generate electrical data directly without a TIA (trans-impedance-amplifier). Consequently, the receiver based on the resonant Ge/Si APD may be cheaper, smaller and lower power than existing approaches.
High-Performance Waveguide-Integrated Ge/Si Avalanche Photodetector with Lateral Multiplication Region

Daoqun Liu,Peng Zhang,Bo Tang,Wenwu Wang,Zhihua Li

DOI: https://doi.org/10.3390/mi13050649

IF: 3.4

2022-04-19

Micromachines

Abstract:High-performance waveguide-integrated Ge/Si APDs in separate absorption, charge, and multiplication (SACM) schemes have been exploited to facilitate energy-efficient optical communication and interconnects. However, the charge layer design is complex and time-consuming. A waveguide-integrated Ge/Si avalanche photodetector (APD) is proposed in a separate absorption and multiplication (SAM) configuration. The device can work at low voltage and high speed with a lateral multiplication region without complexity of the charge layer. The proposed device is implemented by the complementary metal-oxide-semiconductor (CMOS) process in the 8-inch Si photonics platform. The device has a low breakdown voltage of 12 V and shows high responsivity of 15.1 A/W at 1550 nm wavelength under optical power of −22.49 dBm, corresponding to a multiplication gain of 18.1. Moreover, an opto-electrical bandwidth of 20.7 GHz is measured at 10.6 V. The high-speed performance at low voltage shows a great potential to implement high-energy-efficient Si optical communications and interconnections.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
High-Gain High-Sensitivity Resonant Ge/Si Apd Photodetectors

john e bowers,daoxin dai,yimin kang,mike morse

DOI: https://doi.org/10.1117/12.855030

2010-01-01

Abstract:In this paper we present a separate-absorption-charge-multiplication Ge/Si avalanche photodiode, which has a high gain-bandwidth product (e. g., >860GHz at a wavelength of 1310nm). Such a high gain-bandwidth product is attributed to the peak enhancement of the frequency response at the high frequency range. From a small signal analysis, we establish an equivalent circuit model which includes a capacitance parallel connected with an inductance due to the avalanche process. When the APD operates at high bias voltages, the LC circuit provides a resonance in the avalanche, which introduces a peak enhancement.
High-performance Waveguide Ge/Si Avalanche Photodiode with Simplified Fabrication Processes

Yuluan Xiang,Hengzhen Cao,Chaoyue Liu,Daoxin Dai

DOI: https://doi.org/10.1364/acpc.2021.t1d.4

2021-01-01

Abstract:A high-performance waveguide Ge/Si avalanche photodiode is designed and fabricated with simplified processes, showing a high primary responsivity of 0.96 A/W, a 3dB bandwidth of 27 GHz. A 50 Gbps data transmission is also demonstrated.
Tuning Performance Parameters of Ge-on-Si Avalanche Photodetector, Part II: Large Bias Operation

Yanning Chen,Fang Liu,Yali Shao,Yingzong Liang,Sichao Du,Wen-Yan Yin

DOI: https://doi.org/10.1109/access.2024.3449098

IF: 3.9

2024-01-01

IEEE Access

Abstract:The carrier multiplication phenomenon involves hot carriers, which gain kinetic energy while accelerating to equilibrium with the established avalanching electric fields, and is typically explained via the local avalanche model. This work presents two vertical Ge-on-Si avalanche photodetectors fabricated in a separate absorption, charge, and multiplication configuration. Uniformity in materials, doping densities, and device dimensions is maintained, except for the multiplication width, which is used as a control parameter to manipulate avalanching fields under identical electric biasing and illumination schemes. Nonlocal carrier multiplication model is implemented during analysis of the extracted current-voltage signatures under small and large reverse biasing arrangements. For such an APD characterized by thinner multiplication region (W-m=0.1 mu m), reduced linear and Geiger-mode multiplication regimes are perceived to be at play, outperforming the device having thicker multiplication region in almost all related figures of merit, e.g., responsivity (22.58 /W), photo-to-dark current ratio (similar to 10(5)), normalized photo-to-dark current ratio (2.5x 10(9) W-1) , specific detectivity (7.45x 10(12)Jones) , and noise equivalent power (similar to 2.42x 10(-15) W/root Hz) . The enhanced performance characteristics are due to excessively strong avalanching fields, reduced thermal charge density, and negligible dead space compared to its counterpart characterized by thicker multiplication width.
Waveguide Ge/Si Avalanche Photodetector with Ultra-High Gain-Bandwidth Product of 1440Ghz

Hengzhen Cao,Yuluan Xiang,Weichao Sun,Jin Xie,Jingshu Guo,Daoxin Dai

DOI: https://doi.org/10.1109/acp/poem59049.2023.10368970

2023-01-01

Abstract:A lateral Reach-Through type waveguide Ge/Si avalanche photodetector is presented. The device shows a gain of 20.4 and a bandwidth of approximately 45GHz for −18dBm input optical power under −14V reverse bias voltage, with the corresponding gain-bandwidth product of 918GHz. Furthermore, the device has a gain of 32.1 for −21dBm input optical power, which indicating the proposed avalanche photodetector has a record ultra-high gain-bandwidth product of 1440GHz. The 50Gbps eye-diagrams under different optical power are also measured.
Monolithic Ge/Si avalanche photodiodes

yimin kang,michael t morse,mario j paniccia,moshe zadka,yuval saad,gadi sarid,alexandre pauchard,wissem sfar zaoui,huiwen chen,daoxin dai,john e bowers,handin liu,dion mcintosh,xiaoguang zheng,j c campbell

DOI: https://doi.org/10.1109/GROUP4.2009.5338300

2009-01-01

Abstract:We demonstrate mesa-type and waveguide-type Ge/Si avalanche photodiodes both with high performances. The gain-bandwidth product was measured as high as 340 GHz and the receiver sensitivity was -28 dBm and -30.4 dBm for mesa-and waveguide-type devices, respectively.
Photonic crystal enabled manipulation of optical and electric field in germanium avalanche photodetectors

Jinwen Song,Shuai Yuan,Chengcong Cui,Yi Li,Cheng Zeng,Jinsong Xia

DOI: https://doi.org/10.1088/1361-6528/abd5e9

IF: 3.5

2021-01-11

Nanotechnology

Abstract:Abstract We demonstrate the use of a photonic crystal (PhC) structure to improve the performance of a germanium avalanche photodetector (APD) by simultaneously manipulating the distribution of the optical and electric fields. The PhC is fabricated at the top center of the vertical germanium APD. For a 14 μ m diameter device, the 1550 nm responsivity increases from 0.2 to 0.6 A W −1 at unity gain, owing to the resonance-enhanced absorption. Moreover, the structure separates the absorption and multiplication regions of the device, resulting in an increase of the avalanche gain and the gain-bandwidth product. Under −10 dBm input optical power, a 3 dB bandwidth of 34 GHz before avalanche and a clear 40 Gbps eye diagram under avalanche demonstrates good high-speed performance of the device.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
10 Gbps silicon waveguide-integrated infrared avalanche photodiode

Jason J Ackert,Abdullah S Karar,Dixon J Paez,Paul E Jessop,John C Cartledge,Andrew P Knights

DOI: https://doi.org/10.1364/OE.21.019530

2013-08-26

Abstract:We have fabricated monolithic silicon avalanche photodiodes capable of 10 Gbps operation at a wavelength of 1550 nm. The photodiodes are entirely CMOS process compatible and comprise a p-i-n junction integrated with a silicon-on-insulator (SOI) rib waveguide. Photo-generation is initiated via the presence of deep levels in the silicon bandgap, introduced by ion implantation and modified by subsequent annealing. The devices show a small signal 3 dB bandwidth of 2.0 GHz as well as an open eye pattern at 10 Gbps. A responsivity of 4.7 ± 0.5 A/W is measured for a 600 µm device at a reverse bias of 40 V.
Top-Illuminated Annular Ge-on-Si APD in 45-nm Lateral SOI Process With High Gain–Bandwidth Product at 4 V Reverse Bias

Md Nabil Shehtab Dhrubo,John W. Rollinson,Robert F. Karlicek,Mona M. Hella

DOI: https://doi.org/10.1109/ted.2024.3442772

IF: 3.1

2024-09-28

IEEE Transactions on Electron Devices

Abstract:A top-illuminated Ge-on-Si avalanche photodiode is designed and fabricated in GlobalFoundries' 45-nm SOI platform (Si Photonic). The device utilizes an annular-shaped germanium layer as the absorption region, enclosed by cathode contacts to ensure avalanche multiplication of photocarriers and flow of photocurrent from all directions to the central anode. The proposed device structure modification results in an increased gain within a small silicon area. The device utilizes a germanium width of m to reduce the carrier transit time and achieve high optoelectronic bandwidth. Testing is performed using 940- and 1550-nm wavelength continuous wave lasers. At a reverse bias of 4 V, the device shows a peak gain of 3.5 and 8.6 at 940- and 1550-nm wavelength, respectively. At the same bias, a -3-dB optoelectronic bandwidth of around 13.4 GHz is observed for 1550-nm wavelength. This results in a gain-bandwidth product (GBP) of ~115 GHz at 1550-nm wavelength for a low reverse bias of 4 V.

engineering, electrical & electronic,physics, applied
Broadband and Ultra-High-Sensitivity Separate Absorption–Multiplication Avalanche Phototransistor Based on a Au–WSe2–Ge Heterostructure

Liang Gao,Ningning Zhang,Jie You,Bo Wang,Bu Zhang,Zhao Han,Zuimin Jiang,Tian Miao,Hui Guo,Jincheng Zhang,Huiyong Hu,Liming Wang

DOI: https://doi.org/10.1021/acsphotonics.3c01162

IF: 7

2023-01-01

ACS Photonics

Abstract:Avalanche photodetectors (APDs) with ultrahigh sensitivity across a wide spectral range are highly desirable for optical communication, laser radar imaging, biomedical detection, and atmospheric and astronomical observation applications. Here, we present a separate absorption and multiplication (SAM) APD based on a Au/WSe2/Ge heterostructure, where the infrared absorption and avalanche regions are in the Ge substrate and the Au/WSe2 Schottky junction, respectively. Compared with the dark current of a WSe2/Ge photodetector (1 x 10(-9) A), the SAM-type heterostructure exhibits significantly reduced dark current as low as 2 x 10(-11) A and a remarkable avalanche multiplication effect. The inherent mechanism is studied based on the positive temperature coefficient of the breakdown voltage, photocurrent mapping experiments, Sentaurus TCAD simulation, and energy band analysis. Especially, this device achieves extremely high avalanche gains in the infrared range, reaching 1297 and 4100 at 1310 and 1550 nm, respectively. At the same time, in the visible light band, the device still achieves a high avalanche gain of 500 under 532 nm illumination with rise/fall times of 8/8.2 mu s, respectively, demonstrating the excellent broadband avalanche photodetection capability of the device. These results demonstrate that the SAM-type heterostructure APD is promising for low-dark-current, wide-band, and high-gain avalanche photodetection applied in laser radar imaging and single-photon detection systems.
Monolithic Germanium Tin on Si Avalanche Photodiodes

Justin Rudie,Sylvester Amoah,Xiaoxin Wang,Rajesh Kumar,Grey Abernathy,Steven Akwabli,Perry C. Grant,Jifeng Liu,Baohua Li,Wei Du,Shui-Qing Yu

2024-05-22

Abstract:We demonstrate monolithically grown germanium-tin (GeSn) on silicon avalanche photodiodes (APDs) for infrared light detection. A relatively thinner Ge buffer design was adopted to allow effective photo carriers to transport from the GeSn absorber to the Si multiplication layer such that clear punch-through behavior and a saturated primary responsivity of 0.3 A/W at 1550 nm were observed before avalanche breakdown in GeSn/Si APDs for the first time. The spectral response covers 1500 to 1700 nm. The measured punch-through and breakdown voltages are 15 and 17 V, respectively. Undisputed multiplication gain was obtained with the maximum value of 4.5 at 77 K, and 1.4 at 250 K, directly in reference to the saturated primary responsivity from the same device rather than a different GeSn p-i-n photodiode in previous reports. A peak responsivity was measured as 1.12 A/W at 1550 nm and 77 K.

Materials Science
Design and Optimization of High-Responsivity High-Speed Ge/Si Avalanche Photodiode in the C+L Band

Chuan Li,Xinyu Li,Yan Cai,Wei Wang,Mingbin Yu

DOI: https://doi.org/10.3390/mi14010108

IF: 3.4

2022-01-01

Micromachines

Abstract:We present the design of Ge/Si avalanche photodetectors with SiN stressor-induced Ge strain for the C+L band light detection. By optimizing the placement position and thickness of the SiN layer with compressive stress, a uniform strain distribution with a maximum magnitude of 0.59% was achieved in Ge. The surface-illuminated APDs have been studied in respect of the photo-dark current, responsivity, gain, and 3-dB bandwidth. After introducing SiN stressor, the APD exhibits high primary responsivity of 0.80 A/W at 1.55 μm, 0.72 A/W at 1.625 μm, and 3-dB bandwidth of 17.5 GHz. The increased tensile strain in Ge can significantly improve the responsivity and broaden the response band of the device. This work provides a constructive approach to realizing high-responsivity high-speed Ge/Si APD working in the C+L band.
Double modulation of the electric field in InGaAs/Si APD by groove rings for the achievement of THz gain-bandwidth product

Ziwei Shi,Shaoying Ke,Wenhao Meng,Zhanren Wang,Menghui Guo,Xiaolong Jiang,Kun Liu,Zhiwei Lin,Xiaoping Chen

DOI: https://doi.org/10.1088/1402-4896/ad78bf

2024-09-10

Physica Scripta

Abstract:Avalanche photodiode (APD) is commonly used as a receiver in optical communication and light detection and ranging (LIDAR), offering highly sensitive photodetection capabilities. A key strategy for improving the gain-bandwidth product (GBP) of the APD involves the optimization of the electric field distribution using the charge layer. However, traditional modulation methods to adjust the carrier transport and avalanche process using the charge layer often face challenges (inefficiency and non-uniformity). An InGaAs/Si APD based on the wafer bonding method with a GBP up to 1.03 terahertz (THz) is reported theoretically in this work. The charge layer and groove rings are inserted at the InGaAs/Si bonded interface to modulate the electric field in the APD effectively, demonstrating low dark current and reduced avalanche bias of the device. This approach induces a dramatic and rapid variation of the electric field at the interface while reducing the gradient of the electric field in the multiplication layer. Additionally, the indirect impact of the groove ring on mitigating the adverse effects of the lattice mismatch is pointed out, and the optimal doping concentration range of the charge layer is identified to enhance the modulation effect of the electric field for stronger impact ionization. These findings provide valuable insights for the next-generation InGaAs/Si APDs with high GBP for the high-speed data transmission.

physics, multidisciplinary
Resonant normal-incidence separate-absorption-charge-multiplication Ge/Si avalanche photodiodes.

Daoxin Dai,Hui-Wen Chen,John E Bowers,Yimin Kang,Mike Morse,Mario J Paniccia

DOI: https://doi.org/10.1364/OE.17.016549

IF: 3.8

2009-01-01

Optics Express

Abstract:In this work the impedance of separate-absorption-charge-multiplication Ge/Si avalanche photodiodes (APD) is characterized over a large range of bias voltage. An equivalent circuit with an inductive element is presented for modeling the Ge/Si APD. All the parameters for the elements included in the equivalent circuit are extracted by fitting the measured S-22 with the genetic algorithm optimization. Due to a resonance in the avalanche region, the frequency response of the APD has a peak enhancement when the bias voltage is relatively high, which is observed in the measurement and agrees with the theoretical calculation shown in this paper. (C) 2009 Optical Society of America
Fabrication of A 10 Gb/S Ingaas/Inp Avalanche Photodiode with an Algainas/Inp Distributed Bragg Reflector

Yue Ai-Wen,Wang Ren-Fan,Xiong Bing,Shi Jing

DOI: https://doi.org/10.1088/0256-307x/30/3/038501

2013-01-01

Chinese Physics Letters

Abstract:A new planar InGaAs/InP avalanche photodiode (APD) is proposed and fabricated, which incorporates a high reflective AlGaInAs/InP distributed Bragg reflector (DBR) to improve its responsivity. The fabricated APD exhibits a low dark current of less than 3nA at M = 10 and high responsivity of 0.92 A/W at M = 1. The gain bandwidth product of the device is above 80 GHz. The APD receiver exhibits a sensitivity of over −26dBm at BER = 10−12, which is sufficient for 10Gb/s communication systems.

Si charge avalanche enhances APD sensitivity beyond 100 GHz

Avalanche-Enhanced Photocurrents in Pin Silicon Waveguides at 1550 Nm Wavelength

High-speed waveguide Ge/Si avalanche photodiode with a gain-bandwidth product of 615 GHz

Avalanche photodiode with ultrahigh gain–bandwidth product of 1,033 GHz

High-performance waveguide Ge/Si avalanche photodiode with a lateral separate-absorption-charge-multiplication structure

Resonant Si/Ge avalanche photodiode with an ultrahigh gain bandwidth product

High-Performance Waveguide-Integrated Ge/Si Avalanche Photodetector with Lateral Multiplication Region

High-Gain High-Sensitivity Resonant Ge/Si Apd Photodetectors

High-performance Waveguide Ge/Si Avalanche Photodiode with Simplified Fabrication Processes

Tuning Performance Parameters of Ge-on-Si Avalanche Photodetector, Part II: Large Bias Operation

Waveguide Ge/Si Avalanche Photodetector with Ultra-High Gain-Bandwidth Product of 1440Ghz

Monolithic Ge/Si avalanche photodiodes

Photonic crystal enabled manipulation of optical and electric field in germanium avalanche photodetectors

10 Gbps silicon waveguide-integrated infrared avalanche photodiode

Top-Illuminated Annular Ge-on-Si APD in 45-nm Lateral SOI Process With High Gain–Bandwidth Product at 4 V Reverse Bias

Broadband and Ultra-High-Sensitivity Separate Absorption–Multiplication Avalanche Phototransistor Based on a Au–WSe2–Ge Heterostructure

Monolithic Germanium Tin on Si Avalanche Photodiodes

Design and Optimization of High-Responsivity High-Speed Ge/Si Avalanche Photodiode in the C+L Band

Double modulation of the electric field in InGaAs/Si APD by groove rings for the achievement of THz gain-bandwidth product

Resonant normal-incidence separate-absorption-charge-multiplication Ge/Si avalanche photodiodes.

Fabrication of A 10 Gb/S Ingaas/Inp Avalanche Photodiode with an Algainas/Inp Distributed Bragg Reflector