Abstract:We describe a method for calculating, within density functional theory, the electronic structure associated with typical defects which substitute for Cu in the CuO2 planes of high-Tc superconducting materials. The focus is primarily on Bi2Sr2CaCu2O8, the material on which most STM measurements of impurity resonances in the superconducting state have been performed. The magnitudes of the effective potentials found for Zn, Ni and vacancies on the in-plane Cu sites in this host material are remarkably consistent with phenomenological fits of potential scattering models to STM resonance energies. The effective potential ranges are quite short, of order 1 A with weak long range tails, in contrast to some current models of extended potentials which attempt to fit STM data. For the case of Zn and Cu vacancies, the effective potentials are strongly repulsive, and states on the impurity site near the Fermi level are simply removed. The local density of states (LDOS) just above the impurity is nevertheless found to be a maximum in the case of Zn and a local minimum in case of the vacancy, in agreement with experiment. The Zn and Cu vacancy patterns are explained as due to the long-range tails of the effective impurity potential at the sample surface. The case of Ni is richer due to the Ni atom's strong hybridization with states near the Fermi level; in particular, the short range part of the potential is attractive, and the LDOS is found to vary rapidly with distance from the surface and from the impurity site. We propose that the current controversy surrounding the observed STM patterns can be resolved by properly accounting for the effective impurity potentials and wave-functions near the cuprate surface. Other aspects of the impurity states for all three species are discussed.

Impurity Effect on Surface States of Bi（111） Ultrathin Films

The emergence of topologically protected surface states in epitaxial Bi(111) thin films

Structural and Electronic Properties of Atomically Thin Bismuth on Au(111)

Absence of the impurity-resonance spot at a Bi defect located near the Zn impurity in Bi2Sr2Ca(Cu1-xZnx)2O8+δ

Surface Landau levels and spin states in bismuth (111) ultrathin films

Electronic and topological properties of Bi(110) ultrathin films grown on a Cu(111) substrate

Bi(111) Thin Film with Insulating Interior but Metallic Surfaces.

Absence of the impurity-resonance spot at a Bi defect located near the Zn impurity in Bi<sub>2</sub>Sr<sub>2</sub>Ca(Cu<sub>1-<i>x</i></sub>Zn<sub><i>x</i></s ub>)<sub>2</sub>O<sub>8+<i></i></sub>

In Situ STM Observation of Nonmagnetic Impurity Effect in MBE-grown CeCoIn$_5$ Films

Robust Gapless Surface State and Rashba-splitting Bands Upon Surface Deposition of Magnetic Cr on Bi_2Se_3

Evolution of the Electronic Structure in Ultrathin Bi(111) Films

Ab Initio Calculation of Impurity Effects in Copper Oxide Materials

Tunable Surface Conductivity In Bi2se3 Revealed In Diffusive Electron Transport

Large surface-state conductivity in ultrathin Bi films

Electron interaction and localization in ultrathin topological insulator films

Electronic Structure Near an Impurity and Terrace on the Surface of A Three-Dimensional Topological Insulator

Magnetic and Defect Probes of the SmB6 Surface State

Reply to "comment on 'quantum Transport in the Surface States of Epitaxial Bi(111) Thin Films'"

Impurity Effects on the Normal-State Transport Properties Ofba0.5k0.5fe2as2superconductors

Crossover Between Weak Antilocalization and Weak Localization of Bulk States in Ultrathin Bi2Se3 Films

Evolution of Topological Surface States in Antimony Ultra-Thin Films