Abstract:Ideal, completely coherent quantum transport calculations had predicted that superlattice MOSFETs may offer steep subthreshold swing performance below 60mV/dec to around 39mV/dec. However, the high carrier density in the superlattice source suggest that scattering may significantly degrade the ideal device performance. Such effects of electron scattering and decoherence in the contacts of superlattice MOSFETs are examined through a multiscale quantum transport model developed in NEMO5. This model couples NEGF-based quantum ballistic transport in the channel to a quantum mechanical density of states dominated reservoir, which is thermalized through strong scattering with local quasi-Fermi levels determined by drift-diffusion transport. The simulations show that scattering increases the electron transmission in the nominally forbidden minigap therefore degrading the subthreshold swing (S.S.) and the ON/OFF DC current ratio. This degradation varies with both the scattering rate and the length of the scattering dominated regions. Different superlattice MOSFET designs are explored to mitigate the effects of such deleterious scattering. Specifically, shortening the spacer region between the superlattice and the channel from 3.5 nm to 0 nm improves the simulated S.S. from 51mV/dec. to 40mV/dec. I. INTRODUCTION

Effect of Alloy Scattering on Hole Mobility of Ssi/ssige/ssoi Quantum Well Pmosfets

Experimental Investigation on Alloy Scattering in Ssi/ ${\rm Si}_{0.5}{\rm Ge}_{0.5}$ /ssoi Quantum-Well P-Mosfet

Fringing Field Effects in Semiconductor Nanowire Double Heterostructures

Revealing the Scattering Mechanisms of Mobility Degradation in Ultrathin Body SOI Pmosfets

Quantitative Evaluation of Mobility Scattering Mechanisms in Ultra-Thin-Body Ge-OI pMOSFETs

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Impacts of Remote Coulomb Scattering on Hole Mobility in Si p-MOSFFETs at Cryogenic Temperatures

Investigation of Coulomb Scattering on Ssi/Si0.5ge0.5/Ssoi Quantum-Well P-Mosfets

On the Effect of Scattering in Schottky Barrier MOSFETs

Effects of Interface Roughness and Embedded Nanostructures on Device Properties

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Comparison of Different Scattering Mechanisms in the Ge (111), (110), and (100) Inversion Layers of Nmosfets with Si Nmosfets under High Normal Electric Fields

Scattering Mechanisms in Inversion Layers of Ge MOSFETs: Impact of Surface States and Carrier Effective Masses

Investigating scattering effects in nano-scale double gate MOSFETs by using direct solution of the Boltzmann transport equation and Poisson-Schrodinger equation method

Role of remote Coulomb scattering on the hole mobility at cryogenic temperatures in SOI p-MOSFETs

Performance degradation of superlattice MOSFETs due to scattering in the contacts

Scattering mechanisms in shallow undoped Si/SiGe quantum wells

Fang–Howard Wave Function Modelling of Electron Mobility in AlInGaN/AlN/InGaN/GaN Double Heterostructures*

Comprehensive Understanding of the Mobility Scattering Mechanisms and Evaluation of the Universal Mobility in Ultra-Thin-Body Ge-OI p- and n-MOSFETs

Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors

Investigation of Strain Effect on the Hole Mobility in GOI Tri-Gate Pfets Including Quantum Confinement