Abstract:Effective surface passivation is one of the primary prerequisites for high-efficiency silicon solar cells. In this paper, high-quality silicon dioxide (SiO2) films with excellent surface passivation abilities have been realized by thermal oxidation and plasma-enhanced chemical vapor deposition, respectively. By employing SiO2 capped with hydrogenated silicon nitride (SiNx:H) (SiO2/SiNx:H stacks) as the front passivation layers, the emitter saturation current density has been reduced from 90.5 fA/cm(2) to 62.3 fA/cm(2). We have successfully mass-produced thermal-oxidized p-type Czochralski-Si (CZ-Si) solar cells with high conversion efficiency (eta) of 20.1%, which is 0.2% absolutely higher than that of the conventional Al back surface field (Al-BSF) solar cells. With a rational design of process integration, we have further presented a cost-effective way to fabricate high-efficiency SiO2 passivated emitter and rear cells (PERCs) at an existing production line. The introduction of SiO2/SiNx:H stacks on the rear surface can effectively increase the long wavelength response and the rear surface recombination is also suppressed with a rather low surface recombination velocity of 26 cm/s achieved after a post-annealing process. The industrial SiO2 passivated p-type CZ-Si PERCs possess outstanding performances with the average eta of 21.3% and the highest eta of over 21.9%, absolute 1.3% increment in average eta compared with the conventional Al-BSF solar cells. Moreover, we have demonstrated that the relative low illumination response (below 50 W/m(2)) loss of our SiO2 PERCs over a day is extremely limited to be less than 0.2%.

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Application of SiOxNy films in industrial bifacial PERC solar cells

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Application of SiO2 Passivation Technique in Mass Production of Silicon Solar Cells

Tuning Back Side Passivation for Enhancing the Performance of PERC Solar Cells

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Numerical study of mono-crystalline silicon solar cells with passivated emitter and rear contact configuration for the efficiency beyond 24% based on mass production technology

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Suppressing The Blistering of Silicon Nitride in PERC Solar Cells for High Industrial Yield

Optimization of Controllable Factors in the Aluminum Silicon Eutectic Paste and Rear Silicon Nitride Mono-Passivation Layer of PERC Solar Cells

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22.13% Efficient Industrial P-Type Mono Perc Solar Cell

Improved Bifacial Properties of P‐Type Passivated Emitter and Rear Cell Solar Cells toward High Mass Production Efficiency

Optimization of rear surface roughness and metal grid design in industrial bifacial PERC solar cells

Approaching 23% with large‐area monoPoly cells using screen‐printed and fired rear passivating contacts fabricated by inline PECVD

Improved Al 2 O 3 / SiN x and SiO 2 / SiN x stack passivation layer structure PERC sc‐silicon solar cells on mass production line