Deposition and Characterization of Ti2AlC MAX Phase and Ti3AlC Thin Films by Magnetron Sputtering

Ranran Su,Hongliang Zhang,D. J. O'Connor,Liqun Shi,Xiangpeng Meng,Haibin Zhang
DOI: https://doi.org/10.1016/j.matlet.2016.05.086
IF: 3
2016-01-01
Materials Letters
Abstract:We have deposited phase-pure Ti2AlC and Ti3AlC thin films directly on MgO (100) substrates by reactive radio frequency (RF) magnetron sputtering above 600°C for the first time. As-deposited films were characterized with grazing incidence X-ray diffraction (GIXRD), Rutherford backscattering (RBS) and scanning electron microscope (SEM). Single-phase Ti2AlC thin film could be synthesized above 600°C. RBS results indicates a near-stoichiometric Ti2AlC composition is required to prepare these phase-pure films. The films are polycrystalline and displayed arbitrarily oriented hexagonal laminal grains with lateral dimension varying from 150nm to 400nm for deposition temperatures ranging from 600°C to 710°C. The Perovskite phase Ti3AlC was observed in the Ti2AlC sample when the sputtering power is 90W at 615°C and a single-phase Ti3AlC film was formed at 110W.
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