Abstract:A new process to crystallize amorphous silicon without melting and the generation of excessive heating of nearby components is presented. We propose the addition of a molybdenum layer to improve the quality of the laser-induced crystallization over that achieved by direct irradiation of silicon alone. The advantages are that it allows the control of crystallite size by varying the applied fluence of a near-infrared femtosecond laser. It offers two fluence regimes for nanocrystallization and polycrystallization with small and large crystallite sizes, respectively. The high repetition rate of the compact femtosecond laser source enables high-quality crystallization over large areas. In this proposed method, a multilayer structure is irradiated with a single femtosecond laser pulse. The multilayer structure includes a substrate, a target amorphous Si layer coated with an additional molybdenum thin film. The Si layer is crystallized by irradiating the Mo layer at different fluence regimes. The transfer of energy from the irradiated Mo layer to the Si film causes the crystallization of amorphous Si at low temperatures (∼700 K). Numerical simulations were carried out to estimate the electron and lattice temperatures for different fluence regimes using a two-temperature model. The roles of direct phonon transport and inelastic electron scattering at the Mo-Si interface were considered in the transfer of energy from the Mo to the Si film. The simulations confirm the experimental evidence that amorphous Si was crystallized in an all-solid-state process at temperatures lower than the melting point of Si, which is consistent with the results from transmission electron microscopy (TEM) and Raman. The formation of crystallized Si with controlled crystallite size after laser treatment can lead to longer mean free paths for carriers and increased electrical conductivity.

IRRADIATION OF ELECTRON WITH HIGH ENERGY INDUCED MICROCRYSTALLIZATION OF AMORPHOUS SILICON

Irradiation Defects in Silicon Crystal

Depth Profile Study on Raman Spectra of High-Energy-electron-irradiated Hydrogenated Amorphous Silicon Films

Microstructure and Conductivity of Large Area Nanocrystalline Silicon Films Grown by Specially Designed Thermal-Assisted Chemical Vapor Deposition

Structural and Luminescent Properties of Electron-Irradiated Silicon

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Microwave-crystallization of Amorphous Silicon Film Using Carbon-Overcoat As Susceptor

Direct simulation of ion beam induced stressing and amorphization of silicon

Investigation of Microstructure and Photoelectric Properties of Boron- Doped Amorphous Silicon Films

Effect of microwave annealing on amorphous Si of carbon powder

Crystallization and Disappearance of Defects of the Annealed Silicon Nanowires

Ion Assisted Nucleation in Amorphous Silicon: Mechanism and Theoretical Description

Evaluation Of Microstructures And Carrier Transport Behaviors During The Transition Process From Amorphous To Nanocrystalline Silicon Thin Films

Mechanical Properties and Structure Evolution of Single-Crystalline Silicon Irradiated by 1 MeV Au+ and Cu+ Ions

Femtosecond Laser-Induced Crystallization of Amorphous Silicon Thin Films under a Thin Molybdenum Layer

Novel microstructures on the surfaces of single crystal silicon irradiated by intense pulsed ion beams

The formation of well-defined crystalline structures by UV laser irradiation of amorphous silicon films

Effect of photons on atoms in crystallization of amorphous silicon films

Crystallization of Amorphous Si Film by Microwave Annealing with SiC Susceptors

Microstructures and Characteristics of Nanosize Crystalline Silicon Films

Molecular Dynamics Simulations of Pulsed Laser Crystallization of Amorphous Silicon Ultrathin Films