Abstract:TiN thin films were deposited on (111) silicon substrate at room temperature by using self-made filtered cathodic arc plasma system. The ion energy and density bombarding onto the films surfaces were changed by adjusting the negative substrate bias and N_2 and Ar gas flux. The effect of deposition parameters on the texture of TiN films was studied on the view of ion bombardment. The atomic force microscope and X-ray diffraction were employed to characterize the microstructure and morphology of the TiN thin films. The results show that the TiN thin films deposited by filtered cathodic arc plasma are very smooth, and the particle sizes of the TiN is (2070 nm.) And with increasing negative voltage and Ar flux, the preferred crystalline orientation is on the denser (111) orientation. Comparing the two modes of(θ2θ) and grazing angle incidence(1.5°), it finds that the orientate plane (111) parallels the film surface under high Ar flux, and the (220) and (200) orientate in the plane of film.

Effect of Deposition Parameters on Texture of TiN Films Deposited by Filtered Cathodc Arc Plasma