The Effects of Ion Bombarding Energy on the Structure and Properties of TiN Films Synthesized by Dual Ion Beam Sputtering

WZ LI,XM HE,HD LI
DOI: https://doi.org/10.1063/1.356299
IF: 2.877
1994-01-01
Journal of Applied Physics
Abstract:TiN films have been synthesized by dual ion beam sputtering (DIBS) deposition at the temperature below 100 °C. Ion bombardment influenced the metallographic morphology and crystalline orientation of TiN films. TiN film formed under N+ bombardment at low energy (<1 keV) consisted of fine crystal particles without texture. The film bombarded at 300 eV exhibited a hardness of 2750 kgf/mm2, which was an extremely high value for TiN films currently obtained by ion beam assisted deposition. The tribological tests demonstrated that TiN film synthesized by DIBS possessed good wear resistance.
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