Influence of Growing Parameter on the Performance of ZnO Film in MC Sputtering

邹璐,叶志镇

DOI: https://doi.org/10.3969/j.issn.1671-4776.2001.06.015

2001-01-01

Abstract:The application and preparation of ZnO film are disscussed.The special attention is focused on the parameters,such as substrate temperature,oxygen partial pressure and working pressure,which effect the crystal quality and electrical properties of ZnO film in MC sputtering.

What problem does this paper attempt to address?

Microstructure and Optical Properties of ZnO Films Deposited by Radio-frequency Reactive Magnetron Sputtering

XIA Qi-ping,WANG Xiao-xiao,LV Jian-guo,SONG Xue-ping,SUN Zhao-qi

DOI: https://doi.org/10.16553/j.cnki.issn1000-985x.2011.02.006

2011-01-01

Abstract:The c-axis preferred orientation ZnO films was deposited on quartz and Si substrates using RF reactive magnetron sputtering.The O2∶Ar flow ratio was 10∶40,20∶40,30∶40 and 40∶40 during the magnetron sputtering process.The microstructure and optical properties of ZnO films were investigated by X-ray diffraction,stylus profilometer,atomic force microscope and ultraviolet-visible spectrum.The results indicated that ZnO films prepared at 30∶40 had the best crystal quality.The average transmission of ZnO thin films are above 87%.As the O2∶Ar ratio increasing,the transmission of ZnO thin films change non-monotonically and reach a maximum of above 93% at 30∶40.The optical band gap of ZnO films first increases and then decreases as O2∶Ar ratio increasing.Compared with the optical band gap(3.37 eV) of buck ZnO,the band gap of all ZnO films become narrow.
Influence of O_2/Ar Flow Ratio on Microstructures and Photoluminescence of ZnO Films

Wang Xiaoxiao,Xia Qiping,Lü Jianguo,Song Xueping,Sun Zhaoqi

DOI: https://doi.org/10.3969/j.issn.1672-7126.2011.04.03

2011-01-01

Abstract:The ZnO films were deposited by reactive RF magnetron sputtering on Si and quartz substrates.The impacts of growth conditions,including the flow ratio of oxygen and argon,pressure,substrate temperature,and sputtering power,on ZnO film's quality were studied.Its microstructures and optical properties were characterized with X-ray diffraction,atomic force microscopy,and fluorescence spectroscopy.The results show that the ratio of oxygen and argon flow rate strongly affects the microstructures of the ZnO films.For example,at a ratio of 3∶4,the film is found to be highly crystalline with the lowest surface roughness of 0.725 nm.The strong violet emission,peaking at 407 nm,was observed,possibly because of the electron transition between the shallow oxygen donor levels to the top valence band of ZnO.As the ratio increased,the violet emission peak first rapidly moves up,then,slowly decreases.
The Effects of Oxygen Partial Pressure and Substrate Temperature on the Structural and Optical Properties of Zno Films

T Zou,H Ye,WD Shen,ZR Shen,Y Zhu

DOI: https://doi.org/10.1117/12.576370

2005-01-01

Abstract:ZnO were deposited on sapphire and silicon substrates by RF magnetron sputtering from a metallic zinc target. The structural and optical propertied of ZnO films were studied by X-ray diffraction, and UV-VIS-NIR scanning spectrophotometer. XRD measurements show ZnO films had a preferential orientation along the c-axis. Only one peak, (002) phase, appears on the diffraction spectra. The transmittance spectra indicate that ZnO films possessed a transmittance of about 80% in the visible region and a sharp absorption edge at wavelength of about 390nm. The refractive index n and the extinction coefficient k are all sensitive to the oxygen partial pressure and the substrate temperature. Furthermore, based on the ideal five layers symmetrical waveguide films, the relationships of the loss and the thickness of the waveguide layer and the buffer layer were analyzed using ZnO as waveguide layer and SiO2 as buffer layer.
Effects of Growth Parameters on Proprties of P-Type ZnO Films Grown by MOCVD

Lu Yangfan,Ye Zhizhen,Zeng Yujia,Xu Weizhong,Zhu Liping,Zhao Binghui

DOI: https://doi.org/10.3969/j.issn.1674-4926.2007.z1.069

2007-01-01

Chinese Journal of Semiconductors

Abstract:P-type N-ZnO thin films are grown by plasma-assisted metalorganic chemical vapor deposition(MOCVD).Effects of substrate temperature，RF power and flux of DEZn on properties of ZnO films are investigated.
Research of Deposition Condition and Structural Properties of ZnO Films Grown by RF Magnetron Sputtering

CHEN Zhu,ZHANG Shu-ren,YANG Cheng-tao,CHEN Fu-gui,DONG Jia-he,WANG Sheng

DOI: https://doi.org/10.3969/j.issn.1001-2028.2006.07.013

2006-01-01

Abstract:The zinc oxide (ZnO) thin films were deposited on Si(100) substrate by RF magnetron sputtering technique. Discussed were the relationships of microstructure, surface morphology and preferred orientation of ZnO films with the deposition parameters, such as substrate temperature, oxygen partial pressure, and final annealing treatment, etc. It is found that the preferred orientation and microstructure of ZnO films are strongly affected by the deposition temperature and oxygen partial pressure. Therefore, the various deposition conditions are further investigated and compared in detail to obtain the optimum sputtering conditions: the sputtering temperature is lower than 300℃ , and with 50W RF power,Ar:O2=20:5(in volume)and 550~600 ℃ annealing temperature. Based on these conditions, an excellent ZnO films with high c-axis orientation are realized.
Effect of the Substrate Temperature on the Property of ZnO Films Deposited by Magnetron Sputtering with DC at the Low Power

蔡利霞,马书懿,李伟,李锡森,李勇

DOI: https://doi.org/10.3321/j.issn:1001-9731.2008.08.013

2008-01-01

Journal of Functional Biomaterials

Abstract:Using the magnetron sputtering with DC at the low power,we have prepared the ZnO films with strong c-axis orientation on Si substrates.We also studied the influence of the substrate temperature on the mi- crostructure and photolumineseence(PL)properties of ZnO thin films by using X-ray diffraction(XRD)and fluorescence spectrometer.The results showed that the desirable substrate temperature promoted the crystalli- zation of the ZnO films.The photoluminescence(PL)spectrum of the samples has been measured at room tem- perature.Blue peak at 440 and 485nm,green peak at 527nm of the films have been observed.With the rise of the growth temperature,the intensity of the blue peak increased sharply.It is concluded that the blue peak lo- cated at about 440nm was mainly attributed to the interstitial Zinc(Zn_i),the blue peak located at about 485nm may correspond to the electron transition from deep oxygen vacancy level to the valence band,and the green e- mission peak located at about 527nm corresponds to the transition from the bottom of the conduction band to the local level composed of oxide misplaced defects.The growth temperature mainly influence the luminescence properties of the ZnO thin films via changing the kind of the defects and concentrations.
Effects of Gas Parameters on Properties of In2O3 Thin Films Deposited by Magnetron Sputtering

CAI Xi-kun,YUAN Zi-jian,ZHU Xia-ming,ZHANG Bing-po,QIU Dong-jiang,WU Hui-zhen

DOI: https://doi.org/10.16553/j.cnki.issn1000-985x.2011.01.044

2011-01-01

Abstract:In2O3 thin films were prepared by R.F.magnetron sputtering.The effect of sputtering pressure and sputtering gas on the structure,photoelectric properties of In2O3 thin films were investigated.The X-ray diffraction(XRD) analysis shows that the films are polycrystalline and retain a cubic structure.As the sputtering pressure increasing,the grain size of In2O3 thin film increases.The film deposited at the pressure of 1 Pa has the highest mobility of 15.2 cm2/V·s and the lowest carrier concentration of 1.19×1019 cm-3.The carrier concentration of the film grown in O2 atmosphere decreases to 4.39×1013 cm-3 and the average optical transmittance in the infrared region(1.5-5.5 μm) reaches 85%,which is higher than that of the films grown in Ar atmosphere.It can be explained that the addition of O2 in sputtering resulted in oxygen vacancies decrease which leads to the reduction of the carrier concentration and the decrease of absorption of free carrier in the infrared region.
Deposition and Characterization of Sputtered ZnO Films

W. L. Dang,Y. Q. Fu,J. K. Luo,A. J. Flewitt,W. I. Milne

DOI: https://doi.org/10.1016/j.spmi.2007.04.081

IF: 3.22

2007-01-01

Superlattices and Microstructures

Abstract:Zinc oxide thin films were deposited by radio frequency magnetron sputtering at room temperature using a metallic zinc target in a gas mixture of argon and oxygen. Plasma power, oxygen /argon gas ratio, gas pressure, and substrate temperature were varied, and an experimental design method was used to optimize these deposition parameters by considering their interdependence. Crystalline structures and film stresses were examined. Post-deposition rapid thermal annealing was also carried out to observe its effects on the film properties. Statistical analysis was then used to find the optimal sputtering conditions. Results indicated that plasma power and gas pressure have the largest effects on film crystallization and stress and that postdeposition annealing can be used to improve the quality of the film properties.
Influence of Different Substrate and Pressure on Growth and Properties of ZnMgO Films

CHEN Hui,GU Shu-lin,ZHU Shun-min

DOI: https://doi.org/10.3788/fgxb20113205.0482

2011-01-01

Chinese Journal of Luminescence

Abstract:ZnMgO films were grown on the Al_2O_3(sapphire)and ZnO substrates by metal-organic chemical vapor deposition(MOCVD)under different pressures.By analyzing the crystal structure,surface properties, optical and electrical properties of ZnMgO films,We found that different substrates and pressures have an important influence on growth and properties of ZnMgO films.Both high pressure of 5 kPa and ZnO substrate are better for Mg doping in ZnMgO.
Influence of Sputtering Power on Properties of ZnO Thin Films Fabricated by RF Sputtering in Room Temperature

DeDong Han,Yi Wang,ShengDong Zhang,Lei Sun,RuQi Han,Satoru Matsumoto,Yuji Ino

DOI: https://doi.org/10.1007/s11432-011-4347-z

2011-01-01

Science China Information Sciences

Abstract:High mobility and c-axis orientated ZnO thin films were deposited on glass substrates using RF sputtering method at room temperature.Structural properties of ZnO thin films were investigated by X-ray diffraction (XRD).Surface morphology and roughness were studied with scanning electron microscopy (SEM) and atomic force microscopy (AFM).Electrical properties were measured at room temperature using a Hall effect measurement system.The influence of sputtering power on characteristics of ZnO thin films is studied.The results indicate that the sputtering powers have great influence on the crystal quality and mobility of ZnO thin films.By using optimized sputtering conditions,high crystal quality ZnO thin films with Hall mobility of 34 cm 2 /V·s at room temperature were obtained.
Grain Growth Behavior, Surface Morphology Evolution, Structures, and Optical Properties of Zno Thin Films Prepared by Rf Reactive Magnetron Sputtering

Hui Lu,Zhi-Jia Zheng,Xian Lin,Fei Xu,Han Bi,Aatto Laaksonen

2014-01-01

Journal of optoelectronics and advanced materials

Abstract:ZnO thin films were prepared by radio frequency (RF) reactive magnetron sputtering at varying deposition conditions. The effects of RF power (from 40 to 90 W) and substrate temperature (from 100 to 200 degrees C) on the grain growth behavior, surface morphology evolution, and the structural and optical properties of the films were investigated. Atomic force microscopy (AFM) measurements confirmed that the grain size and surface roughness depend mainly on the RF power and increase with increasing it at the initial deposition stage of 5 s, and are strongly affected by the substrate temperature and increase with increasing it at the final deposition stage of 45 min. The influence of both the deposition parameters on the surface structure of the ZnO films at different deposition stages and the mechanism concerning this influence were discussed. The X-ray diffraction (XRD) and optical absorption spectra analysis indicated that all the films deposited for 45 min are in the state of the compressive stress and exhibit polycrystalline nature with the (002) preferential orientation, and they have high optical transparency in the visible range and sharp absorption edges around the wavelength 360 nm corresponding to the ZnO exciton. With the increase of the RF power and substrate temperature, the grain size increases, the residual compressive stress relaxes, and the optical band gaps broaden. In comparison with the RF power, the substrate temperature has more evident influence on the microstructure of the ZnO thin films.
Effect of O2 Partial Pressure and Substrate Temperature on the Plasma Emission Spectra and ZnO Growth Behavior

M. Liu,C. Y. Ma,Q. Y. Zhang

DOI: https://doi.org/10.1002/pssa.200778316

2008-01-01

Abstract:An on‐line measurement of optical emission spectrum (OES) was used to study the variation of Zn and O components in the plasma of ZnO film growth with reactive radio‐frequency magnetron sputtering method. It was found that the decline of all the Zn emission lines shows three different stages with the increase of oxygen partial pressure (PO), corresponding to metal sputtering (PO < 6.0 × 10–3 Pa), the compound sputtering (PO > 5.0 × 10–2 Pa), and the transition range (6.0 × 10–3 Pa to 5.0 × 10–2 Pa), respectively. In the stage of compound sputtering, a critical oxygen pressure is found at about 1.5 × 10–1 Pa. At the oxygen pressures below and above the critical pressure, the film growth is found to be O‐controlled and Zn‐controlled, respectively. Similarly, a critical substrate temperature is found at about 550 °C. At the temperatures above the critical temperature, the variation of Zn472.6 intensity is more obvious, suggesting the deposited films is more close to the stoichiometric ratio than the films deposited at the lower temperatures. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
The Effect of Oxygen Concentration to DC Magnetron Sputtering ZnO:Al Films

韦新颖,祁康成,袁红梅,张良燕

DOI: https://doi.org/10.3969/j.issn.1005-9490.2010.01.001

2010-01-01

Abstract:The ZnO∶Al(ZAO)films was prepared by the direct current magnetron sputtering method.And the effect of oxygen concentration to the structure and photoelectric properties of ZAO film has been studied.The results indicate that the proper oxygen concentration is the key factor of preparing high quality ZAO film successfully.The ZAO film fabricated on particular conditions in this paper shows a good c-axis-orientation,a lowest resistivity of 3.67×10-4 Ω·cm and an average visible light transmittance above 90 %.
Influence of Growth Temperature on the Structure of ZnO Thin Film

王金忠,王新强,闫玮,殷宗友,马燕,姜秀英,杨树人,高鼎三,杜国同

DOI: https://doi.org/10.3969/j.issn.1007-4252.2002.02.005

2002-01-01

Abstract:ZnO films under different growth te mperature were grown on c -plane of sa pphire sub -strates by RF -plasma -enhanced MOCV D.These samples were characterized with XRD and SEM methods.Furthermore,the influences of growth temperature on growth velocity,surface structure and stoichiometry of oxygen and zinc in the films were investigated in detail.The parameter of growth temperature was optimized.T he growth rate of ZnO film is high at 520 o C,while its rough -ness is low.Growing at 550 o C,ZnO thin film with atomic ratio(O:Zn =49.99:50.01)is obtained.
Structures and Electric Properties of RF Sputtered ZnO Films

黄静华,李德杰

DOI: https://doi.org/10.3969/j.issn.1672-7126.2002.03.006

2002-01-01

Abstract:ZnO films can be a promising material used in the electron transmission and acceleration layers in a field emission flat panel display because of its wide band gap (3.1 eV) and low affinity (3.0 eV). The structures and electric properties of the ZnO films, grown by RF magnetron sputtering, were studied with X-ray diffraction spectroscopy (XRD), scanning electron spectroscopy (SEM). The results showed that the substrate temperature and the partial pressures of oxygen and argon gasses during sputtering affect the quality of the films. XRD results showed that high substrate temperature promotes crystallization of the film. The highly textured film is made up of grains with their c-axis normal to the surface. The average size of crystal grains range about 50-60 nm, with a preferential growth orientation in (002) direction. Addition of small amount of oxygen may increase the breakdown electric field strength of the films. For example, when the sputtering gas was Ar+O2 (25%), the breakdown electric field strength increases from 0.17 V/10 nm to 0.35 V/10 nm, as the substrate temperature rises from room temperature to 180°C.
Oxidants in ZnO Thin Film Growth by LP-MOCVD

陈童,顾书林,叶建东,朱顺明,秦锋,胡立群,张荣,施毅,郑有炓

DOI: https://doi.org/10.3969/j.issn.1674-4926.2003.02.014

2003-01-01

Abstract:The experiment proves that plasma ionizing in different oxidants is critically important for depositing the ZnO film. High quality c-axis oriented single-crystal films are grown using CO2 and O2 as oxidant respectively. The ionizing efficiency as a function of the exciting potential, pressure for different oxidant gases is calculated. The influences of the concentration of oxygenic ions on the deposition velocity and growth quality are studied theoretically by the step-flow model. Due to the results of XRD, PL, AFM and AES, high ionizing efficiency of CO2 oxidant gives S1 sample exhibiting a lower growth rate and smoother surface. While sample S2, which uses O2 as its oxidant, obtains high structure properties. This confliction reveals the unavoidable problem of the nonlinear optimization of film properties with respect to the concentration of oxidant ions and contaminations introduced by oxidants.
Effect of Oxygen Pressure on the Growth Behavior and Optical Properties of ZnO Films

Liu Ming,Wei,Qu Sheng-Wei,Gu Jian-Feng,Ma Chun-Yu,Zhang Qing-Yu

DOI: https://doi.org/10.3724/sp.j.1077.2008.01096

2008-01-01

Abstract:Using a reactive radio-frequent magnetron sputtering method, high e-axis oriented ZnO films were deposited on Si(001) and quartz substrates under various oxygen partial pressures with a total pressure of 0.3Pa. Atomic force microscope, X-ray diffraction, UV-Visible transmission spectroscope and photoluminescence (PL) were used to study the effect of oxygen pressure on the surface morphology and optical properties of ZnO films. It is found that the films have three different growth modes in the range of oxygen pressure from 0.04Pa to 0.23Pa. The critical pressures for the transition of film growth can be taken at 0.04-0.08Pa and 0.16-0.19Pa, respectively. When the oxygen pressure is lower than 0.16Pa, the film grown along +c axis. When the oxygen pressure excceds 0.19Pa, grains along -c axis growth are dominant in the films. With the increase of oxygen pressure, the transmittance, refraction index, optical band gap, and PL intensity increase. At the oxygen pressure of 0.19Pa, the film has a narrowest PL spectrum with a full width at half maximum of 88 meV at room temperature.
Effect of Sputtering Power on Structural, Cationic Distribution and Optical Properties of Mn2Zn0.25Ni0.75O4 Thin Films

Xiaobo Zhang,Wei Ren,Wenwen Kong,Qing Zhou,Lei Wang,Liang Bian,Jinbao Xu,Aimin Chang,Chunqi Jiang

DOI: https://doi.org/10.1016/j.apsusc.2017.11.196

IF: 6.7

2017-01-01

Applied Surface Science

Abstract:We investigate the synthesis of Mn2Zn0.25Ni0.75O4 (MZN) thin films by radio frequency (RF) sputtering method at different sputtering powers. The variation of the film morphology, the crystalline structure, the cationic distributions and the optical properties are reported and explained by the variation of the film growth rate. Scanning electron microscopy results indicate that a too fast growth rate of the film results in dense surface defects or the degradation of the film crystallinity. X-ray photoelectron spectroscopy analysis suggests that oxygen defects are almost inevitable in such thin films deposited by RF sputtering. At a moderate (120 W) sputtering power the Mn2+ content increases 10-20% and the Mn4+ content is accordingly reduced. The detailed cationic configuration is proposed, where Zn2+ ions occupy both the tetrahedral site and the octahedral site. Raman and spectroscopic results allows asserting the relation between Mn valence states and the sputtering power. (C) 2017 Elsevier B.V. All rights reserved.
Preparation and characterization of high-quality ZnO film on silicon substrate by DC reactive magnetron sputtering

Jianguang Li,Zhizhen Ye,Binghui Zhao,Jun Yuan

1996-01-01

Abstract:High-quality ZnO films were prepared on silicon substrate by DC reactive magnetron sputtering. The films were characterized by X-ray Photoelectron Spectroscopy (XPS) and X-ray Diffraction (XRD) analysis. The nano-ZnO films grow at C axis orientation and the full width at half maximum (FWHM) is only about 0.7��.
The Influences of High Energetic Oxygen Negative Ions and Active Oxygen on the Microstructure and Electrical Properties of ZnO:Al Films by MF Magnetron Sputtering

Changshan Hao,Bin Xie,Ming Li,Haiqian Wang,Yousong Jiang,Yizhou Song

DOI: https://doi.org/10.1016/j.apsusc.2012.05.027

IF: 6.7

2012-01-01

Applied Surface Science

Abstract:In this paper, ZnO:Al transparent conducting films were prepared on glass substrate by magnetron sputtering from Al doped ZnO ceramic targets. By measuring and analyzing the structure and electrical properties of films in front of targets at different target-to-substrate distance, it was concluded that the bombardment of energetic oxygen negative ions decreased with increasing target-to-substrate distance, dominating variation of resistivity and the microstructure in erosion area, while numbers of active oxygen decrease with increasing target-to-substrate distance, explaining variation of resistivity in non-erosion area. The influence of target-to-substrate distance on electrical and microstructure properties of ZnO:Al films on drum was also investigated in order to confirming our result. The result indicated that both energetic oxygen negative ions and numbers of active oxygen determined the properties of films on drum. While target-to-substrate distance is less than 95 mm, the numbers of energetic oxygen ions are the key factor and vice versa. The optimum resistivity of post-annealed films on drum was 5.1 x 10(-4) Omega cm at target-to-substrate distance of 95 mm. (C) 2012 Elsevier B.V. All rights reserved.

Influence of Growing Parameter on the Performance of ZnO Film in MC Sputtering

Microstructure and Optical Properties of ZnO Films Deposited by Radio-frequency Reactive Magnetron Sputtering

Influence of O_2/Ar Flow Ratio on Microstructures and Photoluminescence of ZnO Films

The Effects of Oxygen Partial Pressure and Substrate Temperature on the Structural and Optical Properties of Zno Films

Effects of Growth Parameters on Proprties of P-Type ZnO Films Grown by MOCVD

Research of Deposition Condition and Structural Properties of ZnO Films Grown by RF Magnetron Sputtering

Effect of the Substrate Temperature on the Property of ZnO Films Deposited by Magnetron Sputtering with DC at the Low Power

Effects of Gas Parameters on Properties of In2O3 Thin Films Deposited by Magnetron Sputtering

Deposition and Characterization of Sputtered ZnO Films

Influence of Different Substrate and Pressure on Growth and Properties of ZnMgO Films

Influence of Sputtering Power on Properties of ZnO Thin Films Fabricated by RF Sputtering in Room Temperature

Grain Growth Behavior, Surface Morphology Evolution, Structures, and Optical Properties of Zno Thin Films Prepared by Rf Reactive Magnetron Sputtering

Effect of O2 Partial Pressure and Substrate Temperature on the Plasma Emission Spectra and ZnO Growth Behavior

The Effect of Oxygen Concentration to DC Magnetron Sputtering ZnO:Al Films

Influence of Growth Temperature on the Structure of ZnO Thin Film

Structures and Electric Properties of RF Sputtered ZnO Films

Oxidants in ZnO Thin Film Growth by LP-MOCVD

Effect of Oxygen Pressure on the Growth Behavior and Optical Properties of ZnO Films

Effect of Sputtering Power on Structural, Cationic Distribution and Optical Properties of Mn2Zn0.25Ni0.75O4 Thin Films

Preparation and characterization of high-quality ZnO film on silicon substrate by DC reactive magnetron sputtering

The Influences of High Energetic Oxygen Negative Ions and Active Oxygen on the Microstructure and Electrical Properties of ZnO:Al Films by MF Magnetron Sputtering