Effect of different growth conditions on the electrical properties of Sn doped ZnO thin films
Li GONG,Yun-zhen LIU,Jian-guo LV,Zhi-zhen YE
DOI: https://doi.org/10.3969/j.issn.1672-9331.2016.01.013
2016-01-01
Abstract:Sn doped ZnO transparent conductive thin films were prepared on glass substrates by direct reactive magnetron sputtering.The electrical properties of thin films were charac-terized by Hall effect measurement.The effect of different conditions on the electrical prop-erties of thin films was studied.The resistivity decreases and then increases as the Ar/O 2 increases.When the Ar/O 2 is 6,the film has the lowest resistivity of 2.02 × 10 -2 Ω·cm. The resistivity dramatically decreases with the increase of sputtering power,which is the lowest,2.89×10 -2 Ω·cm at 140 W.The lowest resistivity of thin films is 1.45×10 -2 Ω· cm when the sputtering time is 1 1 min.The resistivity of thin films first dramatically de-creases and then increases as the sputtering pressure increases.When the sputtering pres-sure is 0.8 Pa,the lowest resistivity of thin films is 2.17×10 -2 Ω·cm.When the substrate temperature is 475 ℃,the thin films exhibits the best electrical properties,with the lowest resistivity of 2.26×10 -2 Ω·cm.During the whole experiments,the thin film has the best conductivity and the resistivity is 1.45 × 10 -2 Ω· cm,when the ratio of Ar/O 2 is 8,the sputtering power is 180 W,the substrate temperature is 450 ℃,the sputtering pressure is 0.5 Pa,and the sputtering time is 1 1 min.