Structures and Electric Properties of RF Sputtered ZnO Films

黄静华,李德杰
DOI: https://doi.org/10.3969/j.issn.1672-7126.2002.03.006
2002-01-01
Abstract:ZnO films can be a promising material used in the electron transmission and acceleration layers in a field emission flat panel display because of its wide band gap (3.1 eV) and low affinity (3.0 eV). The structures and electric properties of the ZnO films, grown by RF magnetron sputtering, were studied with X-ray diffraction spectroscopy (XRD), scanning electron spectroscopy (SEM). The results showed that the substrate temperature and the partial pressures of oxygen and argon gasses during sputtering affect the quality of the films. XRD results showed that high substrate temperature promotes crystallization of the film. The highly textured film is made up of grains with their c-axis normal to the surface. The average size of crystal grains range about 50-60 nm, with a preferential growth orientation in (002) direction. Addition of small amount of oxygen may increase the breakdown electric field strength of the films. For example, when the sputtering gas was Ar+O2 (25%), the breakdown electric field strength increases from 0.17 V/10 nm to 0.35 V/10 nm, as the substrate temperature rises from room temperature to 180°C.
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