Abstract:A series of characterization methods involving high-resolution X-ray diffraction (HR-XRD), electron channel contrast imaging (ECCI), cathodoluminescence microscopy (CL), and atomic force microscopy (AFM) were applied to calculate the dislocation density of GaN-on-Si epitaxial wafers, and their performance was analyzed and evaluated. The ECCI technique, owing to its high lateral resolution, reveals dislocation distributions on material surfaces, which can visually characterize the dislocation density. While the CL technique is effective for low-density dislocations, it is difficult to accurately identify the number of dislocation clusters in CL images as the density increases. The AFM technique analyzes surface dislocation characteristics by detecting surface pits caused by dislocations, which are easily affected by sample and probe conditions. A prevalent method for assessing the crystal quality of GaN is the rocking curve of HR-XRD (ω-scan), which calculates the dislocation density based on the FWHM value of the curves. By comparing the above four dislocation characterization methods, the advantages and limitations of each method are clarified, which also verifies the applicability of DB=β29b2 for GaN-on-Si epitaxial wafers. This provides an important reference value for dislocation characterization in GaN-on-Si materials. The accuracy evaluation of dislocation density can truly and reliably reflect crystal quality, which is conducive to further optimization. Furthermore, this study can also be applied to other heterogeneous or homogeneous epitaxial materials.

High Resolution X-ray Diffraction Analysis of GaN Epitaxial Layer Grown on SiC Substrate

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Structural Properties of GaN(0001) Epitaxial Layers Revealed by High Resolution X-ray Diffraction

Impact of GaN Transition Layers in the Growth of GaN Epitaxial Layer on Silicon

Characterization of GaN Grown on 4H-Sic and Sapphire by Raman Spectroscopy and High Resolution XRD

X-ray Diffraction, Photoluminescence and Secondary Ion Mass Spectroscopy Study of GaN Films Grown on Si(111) Substrate by Vacuum Reactive Evaporation

Microstructure and Strain Analysis of GaN Epitaxial Films Using In-Plane Grazing Incidence X-Ray Diffraction

A Comparison of GaN Epilayers with Multiple Buffer Layers and with a Single Buffer Layer Grown on Si（111） Studied by HRXRD and RBS/Channeling

Threading Dislocation Density Comparison Between GaN Grown on the Patterned and Conventional Sapphire Substrate by High Resolution X-ray Diffraction

Investigation Of Preparation And Properties Of Epitaxial Growth Gan Film On Si(111) Substrate

Crystallographically Tilted and Partially Strain Relaxed GaN Grown on Inclined {111} Facets Etched on Si(100) Substrate

Characterization of crystal lattice constant and strain of GaN epilayers with different AlxGa1-xN and AlN buffer layers grown on Si (111)

Strain relaxation in GaN grown on vicinal 4H-SiC(0001) substrates

A Comparative Study of Methods for Calculating the Dislocation Density in GaN-on-Si Epitaxial Wafers

Reduction of Dislocations in GaN Epilayer Grown on Si (111) Substrates Using a GaN Intermedial Layer

Investigation of preparation and properties of epitaxial growth GaN film on Si(1 1 1) substrate

X‐Ray Diffraction Microstrain Analysis for Extraction of Threading Dislocation Density of GaN Films Grown on Silicon, Sapphire, and SiC Substrates

Investigation of GaSb Epilayer Grown on Vicinal GaAs(001) Substrate by High Resolution X-Ray Diffraction

Comparison of the Properties of GaN Grown on Complex Si-based Structures

Stress state of GaN epilayer grown on sapphire and 6H-SiC substrates