Abstract:Scanning electron beam annealing techniques have been applied to the study of diffusion of implanted arsenic and boron difluoride. Electron beam anneals over the time range 0-180s (at Tmax), with peak temperatures in the range 1100-1200°C have been performed on uniformly implanted samples. Controlled slow cooling has been performed for some samples. Direct sample temperature measurements were made using a dual-colour pyrometer under control of a microcomputer, which provided data-logging and feedback control of temperature. The accurate temperature control achieved using this system is important for realistic diffusion modelling. Measurement of the resulting chemical and electrical dopant profiles, using SIMS, RBS and spreading resistance methodshas shown the presence of non-equilibrium diffusion at short times [6]. Channelling RBS studies used to investigate the activation and clustering behaviour of arsenic during the first stages of these very rapid anneals is reported. Modelling of the arsenic diffusion occuring for a range of implant doses subjected to these anneals has been performed,applying avariety of models, including a dynamic clustering model. This dynamic clustering model, based upon an equilibrium cluster model and a measured de-clustering rate, has been shown previously to give good agreementwith experiment. Forthese experiments, a modified de-clustering coefficient was needed to model the diffusion occuring for a wider range of arsenic implants. A solution of the Poisson equation for the internal electric field has also been incorporated. DLTS techniques have been used to study the defects remaining in diodes fabricated using these implagts andanneals. Trap densities of <5×1010cm−3 and leakages of <2×10−9 A.cm2 at −5V have been measured for the best devices, similar tothose observed for control furnace anneals.

Study on Thermal Annealing Behavior of Nd Ion Implanted Silicon by Deep Level Transient Spectroscopy

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

Influence of High Dose As Ion Implantation on Electrical Properties of High Resistivity Silicon

Effect of heat treatment on the optical and electrical properties of nitrogen-doped silicon samples

Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Shallow thermal donors in silicon doped with isotopic oxygen

Influence of thermal annealing on silicon negative ion implanted SiO2 thin films

Thermal Acceptor Formation in Nitrogen-Doped Silicon

Thermal Nitridation Kinetics of Silicon Wafers in Nitrogen Atmosphere During Annealing

Investigation of Induced-deffects in Pulse Neutron-irradiation Silicon

Rapid-Thermal-Processing-Based Intrinsic Gettering For Nitrogen-Doped Czochralski Silicon

Electron-beam-induced current evidence for room-temperature photoluminescence of silicon pn diode

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Electrically Active Defects in Ni-Si Silicide Studied by Deep-Level Transient Spectroscopy

Depth Profile of Thermal Donors in NTDCZSi

Effects of Defect, Carrier Concentration and Annealing Process on the Photoluminescence of Silicon Pn Diodes

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

Effect of Annealing Temperature on Photoluminescence Performance and Structure of Si-rich Silicon Nitride

Comparing the effect between room temperature and low temperature heavy ion irradiation by deep level transient spectroscopy

Optical Transmission and Photoluminescence of Silicon Nitride Thin Films Implanted with Si Ions