A comparative study on ferromagnetic C/O-implanted GaN films by positron annihilation spectroscopy

Juping Xu,Qiang Li,Jiandang Liu,Bangjiao Ye
DOI: https://doi.org/10.1016/j.nimb.2016.03.057
2016-01-01
Abstract:Room temperature ferromagnetism was observed in both C- and O-implanted GaN films, which were irradiated by 80keV C/O-ions with respective dose of 5×1016 and 2×1017ions/cm2. Positron annihilation spectroscopy was used to explore the magnetic origin and the correlation between the magnetism and structural features. The results reveal that carbon-ions play an important role in the stable ferromagnetism in C-implanted GaN films, while oxygen has no effect on the magnetic properties, even than a weak hysteresis loop was observed in O-implanted sample. This weak ferromagnetism is demonstrated as originated from Ga-related vacancies which induced by implantation. With first-principle calculations, we confirmed that substitutional C-ion at N-site can introduce magnetic moment for 0.8μB and stabilize ferromagnetic coupling with adjacent Ga-vacancy at room temperature. Moreover, the effect of O-ions was clearly ruled out. Our discussion gives an experimental and theoretical insight of the different origin of ferromagnetism between acceptor and donor non-metal-doped GaN materials.
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