Carbon p-electron induced magnetic ordering in Zn-implanted 6H-SiC: experimental observation and theoretical calculation

Qiang Li,Juping Xu,Jiandang Liu,Bangjiao Ye
DOI: https://doi.org/10.1088/2053-1591/3/5/056103
IF: 2.025
2016-01-01
Materials Research Express
Abstract:We observed clear ferromagnetic ordering in 6H-SiC crystal bombarded with zinc ions, and presented a detailed investigation of magnetic properties in this sample. The magnetization of Zn-implanted 6H-SiC fell and rose with annealing temperature from 500 degrees C to 1100 degrees C. Meanwhile, amount of oxygen penetrated lattices and combined with Si-bonds after 1100 degrees C annealing. Using ab initio calculations based on density functional theory, we confirm that Zn ions play a role in the origin of ferromagnetism, while the localized moment is mainly comes from C2p electrons surrounding the foreign particle (which is Zn in this work). Silicon vacancies can provide localized moment about 2.0 mu B/V-Si and form stable ferromagnetic interaction at room temperature. Oxygen may facilitate this coupling and no need of V-C-mediation any more. The calculations are consistent with experimental results. We concluded that the dangling C2p bonds are fundamental cause of magnetic ordering in whatever microstructures in 6H-SiC crystal. The type of foreign impurities is not crucial factor for the magnetic origin in such carbon-based materials.
What problem does this paper attempt to address?