Abstract:High channel current of the high electron mobility transistors (HEMTs) and high relative responsivity of the photodetectors (PDs) were demonstrated in the AlGaN/AlN/GaN channel-stacking epitaxial structures. The interference properties of the X-ray curves indicated high-quality interfaces of the conductive channels. The AlGaN/AlN/GaN interfaces were observed clearly in the transmission electron microscope micrograph. The saturation I ds currents of the HEMT structures were increased by adding a number of channels. The conductive properties of the channel-stacking structures corresponded to the peaks of the transconductance (g m) spectra in the HEMT structures. The depletion-mode one- and two-channel HEMT structures can be operated at the cutoff region by increasing the reverse V gs bias voltages. Higher I ds current in the active state and lower current in the cutoff state were observed in the two-channel HEMT structure compared with one- and three-channel HEMT structures. For the channel-stacking metal-semiconductor-metal photodetector structures, the peak responsivity was observed at almost 300 nm incident monochromic light, which was increased by adding a number of channel layers. The channel current of the HEMT devices and the photocurrent in the PD devices were increased by adding a number of two-dimensional electron gas (2DEG) channels. By using a flat gate metal layer, the two-channel AlGaN/AlN/GaN HEMT structures exhibited a high I ds current, a low cutoff current, and a high peak g m value and have the potential for GaN-based power devices, fast portable chargers, and ultraviolet PD applications.

Optoelectronic Devices on AlGaN/GaN HEMT Platform

Optoelectronic Devices on AlGaN/GaN HEMT Platform (phys. Status Solidi A 5∕2016)

Switching Behaviors of On-Chip Photon Source on AlGaN/GaN-on-Si Power HEMTs Platform

Graphene/p-AlGaN/p-GaN Electron Tunnelling Light Emitting Diodes with High External Quantum Efficiency

Low-Leakage High-Breakdown Laterally Integrated HEMT-LED via n-GaN Electrode

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32 × 32 Pixelated High-Power Flip-Chip Blue Micro-LED-on-HFET Arrays for Submarine Optical Communication

HEMT Controlled Ultraviolet Light Emitters Enabled by P-GaN Selective Epitaxial Growth

GaN-Based Micro-Light-Emitting Diode Driven by a Monolithic Integrated Ultraviolet Phototransistor

Stimulated Emission and Optical Gain in AlGaN Heterostructures Grown on Bulk AlN Substrates

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Direct Epitaxial Approach to Achieve a Monolithic On-Chip Integration of a HEMT and a Single Micro-LED with a High-Modulation Bandwidth

Suspended P–n Junction InGaN/GaN Multiple-Quantum-Well Device with Selectable Functionality

Cathodoluminescence of quantized energy states at AlGaN/GaN interface

Efficiency Improved by Monolithic Integration of HEMT with Vertical-Structure LEDs and Mg Doping on Dry Etched GaN

Iii-Nitride Transistors With Photonic-Ohmic Drain For Enhanced Dynamic Performances

Optical and Electrical Properties of AlGaN-Based High Electron Mobility Transistors and Photodetectors with AlGaN/AlN/GaN Channel-Stacking Structure

Interface Charge Engineering in Down-Scaled AlGaN (<6 Nm)/gan Heterostructure for Fabrication of GaN-based Power HEMTs and MIS-HEMTs

On the integrated p-type region free of electron blocking layer for AlGaN-based deep-ultraviolet light emitting diodes

Impact of Integrated Photonic-Ohmic Drain on Static and Dynamic Characteristics of Gan-On-Si Heterojunction Power Transistors

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