Abstract:This paper reviews the device physics and technology of optoelectronic devices based on semiconductors of the GaN family, operating in the spectral regions from deep UV to Terahertz. Such devices include LEDs, lasers, detectors, electroabsorption modulators and devices based on intersubband transitions in AlGaN quantum wells (QWs). After a brief history of the development of the field, we describe how the unique crystal structure, chemical bonding, and resulting spontaneous and piezoelectric polarizations in heterostructures affect the design, fabrication and performance of devices based on these materials. The heteroepitaxial growth and the formation and role of extended defects are addressed. The role of the chemical bonding in the formation of metallic contacts to this class of materials is also addressed. A detailed discussion is then presented on potential origins of the high performance of blue LEDs and poorer performance of green LEDs (green gap), as well as of the efficiency reduction of both blue and green LEDs at high injection current (efficiency droop). The relatively poor performance of deep-UV LEDs based on AlGaN alloys and methods to address the materials issues responsible are similarly addressed. Other devices whose state-of-the-art performance and materials-related issues are reviewed include violet-blue lasers, 'visible blind' and 'solar blind' detectors based on photoconductive and photovoltaic designs, and electroabsorption modulators based on bulk GaN or GaN/AlGaN QWs. Finally, we describe the basic physics of intersubband transitions in AlGaN QWs, and their applications to near-infrared and terahertz devices.

Optoelectronic Devices on AlGaN/GaN HEMT Platform (phys. Status Solidi A 5∕2016)

Graphene/p-AlGaN/p-GaN Electron Tunnelling Light Emitting Diodes with High External Quantum Efficiency

Switching Behaviors of On-Chip Photon Source on AlGaN/GaN-on-Si Power HEMTs Platform

Iii-Nitride Transistors With Photonic-Ohmic Drain For Enhanced Dynamic Performances

Optical and Electrical Properties of AlGaN-Based High Electron Mobility Transistors and Photodetectors with AlGaN/AlN/GaN Channel-Stacking Structure

GaN-Based Micro-Light-Emitting Diode Driven by a Monolithic Integrated Ultraviolet Phototransistor

Low-Leakage High-Breakdown Laterally Integrated HEMT-LED via n-GaN Electrode

Cathodoluminescence of quantized energy states at AlGaN/GaN interface

Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz

HEMT Controlled Ultraviolet Light Emitters Enabled by P-GaN Selective Epitaxial Growth

Emerging gallium nitride based devices

Si/AlN p-n heterojunction interfaced with ultrathin SiO2

AlGaN/AlN heterostructures: an emerging platform for nonlinear integrated photonics

Next generation electronics on the ultrawide-bandgap aluminum nitride platform

Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes

Si/AlN p-n heterojunction interfaced with ultrathin SiO 2

Ultrawide bandgap semiconductor heterojunction p–n diodes with distributed polarization-doped p-type AlGaN layers on bulk AlN substrates

Ultrawide bandgap semiconductor heterojunction p-n diodes with distributed polarization doped p-type AlGaN layers on bulk AlN substrates

Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping

Iii-Nitride Deep Ultraviolet Micro- and Nano-Photonics

AlGaN/GaN‐based Photoimaging Transistors and Arrays with Reconfigurable Triple‐Mode Functionalities Enabled by Voltage‐Programmed Two‐Dimensional Electron Gas