HEMT Controlled Ultraviolet Light Emitters Enabled by P-GaN Selective Epitaxial Growth

Jingyang Zhang,Wei Huang,Zhihao Su,Zhiwen Liang,Qi Wang,Au Yeng Wai Lun,D. W. Zhang,Zhaojun Liu

DOI: https://doi.org/10.1109/led.2022.3199986

IF: 4.8157

2022-01-01

IEEE Electron Device Letters

Abstract:This letter demonstrates a novel HEMT controlled ultraviolet light emitter by directly modifying the drain of AlGaN/GaN HEMTs. The selective epitaxial growth (SEG) p-GaN on HEMTs contacts with two dimensional electron gas (2DEG) to form a lateral p-GaN/2DEG junction, which utilizes the recombination of holes in p-GaN and high-density electrons in 2DEG to realize luminescence. Our results show that the ultraviolet light with a maximum intensity of 374.9 nm is emitted by the new devices, which is also able to realize color conversion by driving quantum dots (QDs). The new method shows an idea of converting electrical devices into light-emitting devices, which is different from the traditional integration. This work represents the first light emitting HEMT without integrated LEDs.