Abstract:Under the operating conditions of high power and high switching frequency, an insulated gate bipolar transistor (IGBT) chip can produce relatively large power loss, causing the junction temperature to rise rapidly; consequently, the reliability of the IGBT module can be seriously affected. Therefore, it is necessary to accurately predict the junction temperature of the IGBT chip. The resistance capacitance (RC) thermal network model is a commonly used method for IGBT junction temperature prediction. In this paper, the model parameters are obtained by two methods to establish the Cauer thermal network models of the IGBT module. The first method is to experimentally obtain the transient thermal impedance curve of the IGBT module and the structure function and then extract the individual thermal parameters of the Cauer thermal network model; the second method is to obtain the thermal parameters of the thermal network model directly by using theoretical formulas that consider the influence of the heat spreading angle. The predicted junction temperatures of the Cauer thermal network models established by the two methods are compared with the junction temperatures obtained from infrared (IR) measurements during the power cycling test, the junction temperatures measured by the temperature-sensitive electrical parameter (TSEP) method, and the junction temperatures calculated by finite element (FE) analysis. Additionally, the Cauer thermal network models established by the two methods are compared and verified. The results indicate that the Cauer thermal network model established based on theoretical formulas can accurately predict the maximum junction temperature of the IGBT chip, and the calculated temperature for each layer, from the IGBT chip layer to the ceramic layer, also accords well with the FE results. The Cauer thermal network model established based on the experimental test and the structure function can accurately predict the average junction temperature of the IGBT chip.

Models Used in V-I Measuring Curve of PTCR

Modeling and Analysis of Thermal Cycle System for Quantitative PCR Instrument

Research on thermal cycle system for real-time PCR instrument based on equivalent circuit model

Research and verification of thermal model for PCR instrument temperature field

Study on factors affecting thermal performance of PCR thermal cycle system by equivalent circuit

FEA for Steady-State Thermal Performance of PCR Thermal-Cycler Based on Thermoelectric Cooler

Data Processing Program for PTCR Resistivity-Temperature

Theoretical and Experimental Studies on Thermal Control by Using a Novel PTC Material with Room Temperature Curie Point

Study on Dynamic Thermal Control Performance of Positive Temperature Coefficient (PTC) Material Based on a Novel Heat Transfer Model Considering Internal Heat Transfer

A Dimensionless Study on Thermal Control of Positive Temperature Coefficient (PTC) Materials

The Integrated Performance of Adaptive Temperature Control and Temperature Measurement of PTC Materials with High Thermal Cycle Repeatability

Circuit Model of Q(t) Data at High Temperature and Evaluation of Delay Parameters

Experimental Study of Accurate Temperature Control Using PTC Resistance

Temperature Control Performance of a Spaceborne PTC Heating System: Dynamic Modeling and Parametric Analysis

Research on Measuring Instrument for the Resistance-temperature Curve of Thermistor

Measurement and Preliminary Calculation of Typical Object Surface Temperature

Design of a Negative Temperature Coefficient Temperature Measurement System Based on a Resistance Ratio Model

Comparative Study of the Parameter Acquisition Methods for the Cauer Thermal Network Model of an IGBT Module

SPICE Model of Polyswitch Device

Numerical and Experimental Evaluation on Methods for Parameter Identification of Thermal Response Tests

Study on the low Curie point positive temperature coefficient (PTC) material based on the conductive model