High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick H‐bn As a Tunneling Layer

Jingli Wang,Qian Yao,Chun-Wei Huang,Xuming Zou,Lei Liao,Shanshan Chen,Zhiyong Fan,Kai Zhang,Wei Wu,Xiangheng Xiao,Changzhong Jiang,Wen-Wei Wu
DOI: https://doi.org/10.1002/adma.201602757
IF: 29.4
2016-01-01
Advanced Materials
Abstract:High-performance MoS2 transistors are developed using atomic hexagonal boron nitride as a tunneling layer to reduce the Schottky barrier and achieve low contact resistance between metal and MoS2. Benefiting from the ultrathin tunneling layer within 0.6 nm, the Schottky barrier is significantly reduced from 158 to 31 meV with small tunneling resistance.
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