Abstract:In the design of electronic devices based on two-dimensional heterojunctions, the contact between electrodes and different surfaces of two-dimensional heterojunctions may produce different effects. Furthermore, metal-semiconductor contact plays an important role in modern devices. However, due to the Fermi level pinning effect (FLPE), it is difficult to tune the Schottky barrier height between common metals (e.g. Au, Ag, and Cu) and semiconductors. Fortunately, the FLPE becomes weak at the contact between the 2D metal and 2D semiconductor, due to the suppression of metal-induced gap states. Here, we choose monolayer NbS2 as the electrode to be in contact with the MoSe2/WSe2 bilayer. The interfacial properties as well as the stacking dependence are discussed based on the density functional theory, combined with the nonequilibrium Green's functions. Two configurations are considered, i.e. the WSe2/MoSe2/NbS2 and MoSe2/WSe2/NbS2 stacking sequences. Our results show that barrier free contact can be formed in these 2D metal-semiconductor junctions (MSJs). In addition, the transport properties of the proposed devices are sensitive to the stacking sequence. The drain-source current versus bias voltage (I-V) curve exhibits a linear relationship for the WSe2/MoSe2/NbS2 system and its resistance is much lower than the MoSe2/WSe2/NbS2 MSJ. Detailed analysis reveals that the transport properties are governed by the electronic coupling between specific interlayer states. In WSe2/MoSe2/NbS2 configuration, large overlapping states are observed, which facilitate charge transfer and result in good ohmic contact. Our work may provide a theoretical guidance for the designing of next-generation ultrathin and flexible devices.

Strong hybridization of Nb2C with MoS2: a way to reduce contact resistance

One-Step Synthesis of Metal/Semiconductor Heterostructure NbS2/MoS2

Ohmic contacts in MXene/MoSi2N4 heterojunctions

Designing Barrier-Free Metal/MoS 2 Contacts through Electrene Insertion

MoS2 Transistor with Weak Fermi Level Pinning via MXene Contacts

A "click" Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance.

Tunable Schottky contacts in MSe 2 /NbSe 2 (M = Mo and W) heterostructures and promising application potential in field-effect transistors.

Improved Contact Resistance by a Single Atomic Layer Tunneling Effect in WS2 /MoTe2 Heterostructures

Functional groups and vertical strain regulate the electronic properties of Nb2NT2/MoTe2 heterojunction

Interface transition from Ohmic to Schottky contact in Ti3X2/MoS2 (X= B, C, N): Insights from first-principles

ZrTe2 Compound Dirac Semimetal Contacts for High-Performance MoS2 Transistors.

Low Contact Resistance on Monolayer MoS2 Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts

Tuning the Schottky barrier height in single- and bi-layer graphene-inserted MoS2/metal contacts

Toward barrier free contact to MoSe2/WSe2 heterojunctions using two-dimensional metal electrodes

MoS2transistors gated by ferroelectric HfZrO2with MoS2/mica heterojunction interface

Reduced Schottky barrier height at metal/CVD-grown MoTe<sub>2</sub> interface

Substitutional p-Type Doping in NbS2 -MoS2 Lateral Heterostructures Grown by MOCVD

Reduced Schottky Barrier Height at Metal/cvd-Grown MoTe2 Interface

The Contacts of the Monolayer Semiconductor C2N with 2D Metal Electrodes

Enhanced Conductivity Along Lateral Homojunction Interfaces of Atomically Thin Semiconductors

Gate-tunable interfacial properties of in-plane ML MX2 1T0-2H heterojunctions