FEASIBLE METHOD TO FABRICATE A NICKEL-NANODOT MASK ON A SILICON SUBSTRATE WITH CONVENTIONAL THERMAL ANNEALING

Xuping Kuang,Jili Tian,Hui Guo,Yi Hou,Huayu Zhang,Tiejun Liu
DOI: https://doi.org/10.17222/mit.2017.006
IF: 0.6499
2018-01-01
Materiali in tehnologije
Abstract:In this paper, a simple and feasible method to fabricate a Ni-nanodot mask on a silicon substrate is reported. Without using a high-cost rapid thermal annealing (RTA) furnace, this method was based on the conventional thermal annealing of a Ni layer deposited on a Si substrate. In addition, the influences of the Ni-layer thickness and annealing conditions on the size and density of the Ni nanodots were systematically investigated. The as-prepared Ni nanodots were well distributed, having a uniform size and a regular spherical shape. Moreover, a Si nanopillar array could be fabricated by inductively coupled plasma (ICP) etching using the as-obtained Ni-nanodot array mask.
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