Abstract:In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

Recovery of Failed Resistive Switching Random Access Memory Devices by A Low-Temperature Supercritical Treatment

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Low Temperature Improvement Method on ${\rm Zn{:}SiO}_{x}$ Resistive Random Access Memory Devices

Low temperature improvement method on Zn:SiOx resistive random access memory devices

Improvement of Bipolar Switching Properties of Gd:SiO x RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO 2 Treatment

Improvement of Hafnium Oxide Resistive Memory Performance Through Low-Temperature Supercritical Oxidation Treatments

Improvement mechanism of resistance random access memory with supercritical CO 2 fluid treatment

Improvement of Resistive Switching Characteristic in Silicon Oxide-Based RRAM Through Hydride- Oxidation on Indium Tin Oxide Electrode by Supercritical CO<sub>2</sub> Fluid

Physical and Chemical Mechanisms in Oxide-Based Resistance Random Access Memory.

mprovement mechanism of resistance random access memory with upercritical CO 2 fluid treatment uan

Oxygen-ion-migration-modulated Bipolar Resistive Switching and Complementary Resistive Switching in Tungsten/indium Tin Oxide/gold Memory Device

Boosting the Performance of Resistive Switching Memory with a Transparent ITO Electrode Using Supercritical Fluid Nitridation

Understanding the Switching Oxide Defect Formation and Recovery on HfOx Based RRAM Device

Resistive Switching Mechanisms for Nonvolatile Resistive Random Access Memory Based on I-V Characteristic

Forming-Free One-Selector/One-Resistor Characteristics of Oxygen-Rich ITO Based Transparent Resistive Switching Memory via Defect Engineering Using the Reactive Sputtering Process

High-throughput phase-field simulations and machine learning of resistive switching in resistive random-access memory

Resistance Switching for RRAM Applications.

Identify the Critical Regions and Switching/Failure Mechanisms in Non-Filamentary Rram (A-Vmco) by Rtn and Cvs Techniques for Memory Window Improvement

Enhanced Resistive Switching Performance of Aluminum Oxide Dielectric with a Low Temperature Solution-Processed Method

Voltage and Power-Controlled Regimes in the Progressive Unipolar Reset Transition of Hfo2-Based Rram

A Novel Operation Scheme for Oxide-Based Resistive-Switching Memory Devices to Achieve Controlled Switching Behaviors