Influence of vacation defects and element doping on the optical properties and electronic structure of Bi12GeO20 semiconductor
Xudong Zhang,Xinyue Chen,Feng Wang
DOI: https://doi.org/10.1016/j.mssp.2022.106676
IF: 4.1
2022-08-01
Materials Science in Semiconductor Processing
Abstract:In this work, first-principles calculations are carried out to investigate the optical and electronic properties of Bi12GeO20 sillenite with vacancy defects and element doping. The optical properties include the reflectivity, absorption coefficient, loss function, dielectric function, refractive index and so on. The negative ε1(ω) distribute in energy region of 4.5–8.5eV. According to the right shift of the peak of ε2(ω), D-Ba, V–Ge and V–Bi can improve the transition of electron. The curves of n(ω) and k(ω) share the same variation trends with the dielectric function curves of ε1(ω) and ε2(ω), respectively. The band structure, density of states and the electron density difference were studied. The most Bi12GeO20 with vacation can be seen as the direct bandgap semiconductors except for Bi12GeO20 with the three oxygen atoms vacancies. The formation of the impurities of D-Mg. D-Ca, D-Sr, D-Ba can slightly widen the bandgap of Bi12GeO20. And the vacancies can bring positive effect to narrow the bandgap. The oxygen atoms and the element doping of metallic atoms are related with the ionic bonds.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied