Abstract:In the fabrication of flexible a‐IGZO and LTPS thin film transistor (TFT) hybrid backplane, various threshold voltage (Vth) of the a‐IGZO TFT was achieved in this paper by regulating the O 2 /Ar ratio during the deposition of a‐IGZO film by sputtering. The results show that the Vth increases with the increase of the O 2 /Ar ratio, and the reliability tests indicate that in a certain range negative adjustment of Vth can significantly improve the positive bias temperature instability (PBTI) of IGZO TFT, and maintain good electrical uniformity. The increase of the O 2 /Ar ratio reduces the number of oxygen vacancy (Vo) in the a‐IGZO channel, and thereby Vth is positively shifted, which is confirmed by the TCAD simulation. The Vth value can indicate the Vo concentration in a‐IGZO TFT channel partly, and appropriately higher amount of Vo is beneficial to improve the PBTI, which is attributed to Fermi level (EF) shifting closer to conduction band. Raised EF means less unoccupied trap states, resulting in less carrier trapping under PBTI. Furthermore, the research also explores different a‐IGZO channel thicknesses and finds that when the Vth values are similar, thinner channel layers endow a‐IGZO TFT with improved PBTI. By optimizing the Vth and channel thickness, a‐IGZO TFTs with a channel thickness of 25nm and a Vth value of 0.2V have been prepared in a hybrid backplane. Under positive bias temperature stress for 5 hours, the Vth is positively shifted less than 0.5 V, which could lay the foundation for achieving high‐reliability flexible backplane for AMOLEDs.

Estimation of Threshold Voltage Shift in A-Igzo TFTs under Different Bias Temperature Stress by Improved Stretched-Exponential Equation

A gate-stress-induced ΔVth model reflecting impact of electric field in IGZO thin film transistors

Temperature Dependent Anomalous Threshold Voltage Modulation of a-IGZO TFT by Incorporating Variant Gate Stresses

Abnormal Threshold Voltage Shift Caused by Trapped Holes under Hot-Carrier Stress in A-Igzo TFTs

Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Gate Bias Stress-Induced Threshold Voltage Shift Effect of a-IGZO TFTs with Cu Gate

Stablity research and application of amorphous indium gallium zinc oxide tfts for active matrix organic light-emitting diode display

Bi-directional threshold voltage shift of amorphous InGaZnO thin film transistors under alternating bias stress

Investigation of an Anomalous Hump Phenomenon in Via-Type Amorphous In-Ga-Zn-O Thin-Film Transistors under Positive Bias Temperature Stress

Effect of ${\rm O}_{2}$ Flow Rate During Channel Layer Deposition on Negative Gate Bias Stress-Induced $V_{\rm th}$ Shift of a-IGZO TFTs

Charge Trapping Model for Temporal Threshold Voltage Shift in A-Igzo TFTs Considering Variations of Carrier Density in Channel and Electric Field in Gate Insulator

Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

Dynamic Threshold Voltage Modulation in Double-Gate Indium-Gallium-Zinc Oxide Thin-Film Transistors: Influence of the Active Layer Thickness

Reliability Analysis under Bias Stress and Elevated Temperature of Dual-Gate IGZO TFT

Decreasing the V th shift of InGaZnO thin-film transistors under positive and negative bias stress using SU-8 as etch-stop and passivation layer

P‐12: Improve the Reliability of a‐IGZO TFT through Optimizing the Threshold Voltage and Channel Thickness in AMOLED Hybrid Backplane

Mobility Variation and Threshold Voltage Shift Immunized Amorphous-Indium-gallium-zinc-oxide Pixel Circuit

Effect Of O-2 Flow Rate During Channel Layer Deposition On Negative Gate Bias Stress-Induced V-Th Shift Of A-Igzo Tfts

Current Temperature Stress Induced Threshold Degradation on Corbino A-Ingazno Transistors

16‐3: Investigation of Mechanical Stress and Gate Bias Stress on Flexible Dual‐gate a‐IGZO Thin Film Transistors

Two-step Degradation of A-Ingazno Thin Film Transistors under DC Bias Stress