Mobility Variation and Threshold Voltage Shift Immunized Amorphous-Indium-gallium-zinc-oxide Pixel Circuit

Zhiqiang Liao,Hesheng Lin,Binjie Liu,Min Zhang
DOI: https://doi.org/10.1109/edssc.2016.7785256
2016-01-01
Abstract:A mobility variation and threshold voltage (Vth) shift immunized amorphous-indium-gallium-zinc-oxide (a-IGZO) pixel circuit has been proposed for active matrix organic light-emitting diode (AMOLED) display application. The pixel circuit consists of four a-IGZO thin film transistors (TFTs) with a simple driving scheme. The design has been validated to compensate for the mobility variation and Vth shift of the driving TFT based on simulation. The current of organic light-emitting diode (OLED) changes by only 10.1% when the Vth is shifted towards the positive direction by 40% and the mobility is decreased by 10%, while that from a conventional a-IGZO pixel circuit changes by 36.1% under the same condition.
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